Self-catalytic formation and characterization of Zn2SnO4 nanowires

Self-catalytic formation and characterization of Zn2SnO4 nanowires
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Zn2SnO4 纳米线的自催化形成及表征

DOI:
10.1016/j.matlet.2006.04.062
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发表时间:
2007
期刊:
MATERIALS LETTERS (accepted)
影响因子:
--
通讯作者:
凤仪
凤仪
中科院分区:
其他
文献类型:
--
作者:
苏勇;朱黎昂;徐亮;陈翌庆;肖海花;周庆涛;凤仪

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采用热蒸发法在无催化剂的条件下成功制备了透明半导体三元氧化物Zn 2SnO 4纳米线。采用场发射扫描电子显微镜(FE-SEM)、X射线粉末衍射(XRD)、能谱(EDS)、高分辨透射电子显微镜(HR-TEM)和选区电子衍射(SEAD)对产物进行了表征。讨论了Zn 2SnO 4纳米线的自催化VLS生长机理。室温下纳米线的光致发光谱(PL)显示出在300-600 nm波长附近的宽的蓝绿色发射,最大中心在580 nm处。
Mass production of transparent semiconducting ternary oxide Zn2SnO4nanowires is successfully synthesized by the thermal evaporation method without any catalyst. The as-synthesized products are characterized with field-emission scanning electron microscope (FE-SEM), X-ray powder diffraction (XRD), energy-dispersive spectroscopy (EDS), high-resolution transmission electron microscope (HR-TEM) and selected area electron diffraction (SEAD). A formation of Zn2SnO4nanowires based on a self-catalytic VLS growth mechanism is discussed. The photoluminescence spectrum (PL) of the nanowires shows a broad blue-green emission around the 300–600 nm wavelengths with a maximum center at 580 nm under room temperature.
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