Photoluminescence of Tb3+-doped SiNx films with different Si concentrations
Photoluminescence of Tb3+-doped SiNx films with different Si concentrations
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不同Si浓度的Tb3掺杂SiNx薄膜的光致发光
DOI：
10.1016/j.mseb.2007.07.023
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发表时间：
2008-01
期刊：
影响因子：
--
通讯作者：
Yuan, Zhizhong
中科院分区：
文献类型：
--
作者：
Cheng, Peihong;Chen, Peiliang;Li, Dongsheng;Wang, Minghua;Yang, Deren;Gong, Daoren;Yuan, Zhizhong
采用等离子体增强化学气相沉积(PECVD)和离子注入法制备了掺Tb{sup3+}的SiN{subx}薄膜(SiN{subx}：Tb{sup3+})。并研究了不同硅浓度的SiN{subx}衬底对Tb{sup3+}发光的影响。实验结果表明，在不同的SiN{subx}：Tb{sup3+}薄膜中观察到了Tb{sup3+}离子的两组光致发光峰。发光强度随退火温度的升高而增大。SiN{subx}衬底的N和Si悬挂键的缺陷态对高温退火后Tb{sup3+}的发光影响不大。对于退火后的富硅SiN{subx}(SRN)薄膜，Si纳米团簇从基质中析出。退火后的SRN薄膜由于能带尾态和Si纳米团簇而增加了氧浓度和光吸收，从而降低了Tb{sup3+]离子的发光。
Tb{sup 3+}-doped SiN{sub x} films (SiN{sub x}:Tb{sup 3+}) were prepared by plasma-enhanced chemical vapor deposition (PECVD) and ion-implantation. And the effects of the SiN{sub x} substrates with different Si concentrations on the light emission of Tb{sup 3+} were investigated. Experimental results show that two groups of photoluminescence (PL) peaks of Tb{sup 3+} ions were observed in different SiN{sub x}:Tb{sup 3+} films. And the PL intensity increased with annealing temperature. The defect states of N and Si dangling bonds of the SiN{sub x} substrate had little effect on the light emission of Tb{sup 3+} after the high-temperature annealing. For the annealed Si-rich SiN{sub x} (SRN) film, Si nanoclusters precipitated from the host matrix. The increased oxygen concentration and the optical absorption due to the band tail states and Si nanoclusters of the annealed SRN film decreased the light emission of Tb{sup 3+} ions.
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影响因子：
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作者：
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