Radiative heat transfer exceeding the blackbody limit between macroscale planar surfaces separated by a nanosize vacuum gap.
Radiative heat transfer exceeding the blackbody limit between macroscale planar surfaces separated by a nanosize vacuum gap.
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DOI：
10.1038/ncomms12900
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发表时间：
2016-09-29
影响因子：
16.6
通讯作者：
Francoeur, Mathieu
中科院分区：
文献类型：
--
作者：
Bernardi, Michael P.;Milovich, Daniel;Francoeur, Mathieu
利用Rytov的波动电动力学框架，Polder和Van Hove预测，由于倏逝模式的隧穿，被小于热波长的真空间隙隔开的平面之间的辐射传热超过了黑体极限。这一发现导致了利用诸如热光伏转换器和热整流器等倏逝模式的系统概念化。然而，由于缺乏能够在由纳米级真空间隙分隔的宏观平面之间进行辐射传输的设备，它们的发展受到限制。在这里，我们使用定制的器件测量大温差（~ 120k）下的辐射传热，其中两个5 × 5 mm2本征硅平面的间隙从3,500 nm调制到150 nm。据报道，对于150nm厚的间隙，在黑体极限上有8.4倍的显著增强。我们的装置为建立新的基于倏逝波的系统铺平了道路。距离小于热波长的表面之间的倏逝耦合可以导致辐射传热大于黑体极限。在这里，作者在两个宏观尺度的表面之间证明了这一点，为在热设备中利用这种效应铺平了道路。
Using Rytov's fluctuational electrodynamics framework, Polder and Van Hove predicted that radiative heat transfer between planar surfaces separated by a vacuum gap smaller than the thermal wavelength exceeds the blackbody limit due to tunnelling of evanescent modes. This finding has led to the conceptualization of systems capitalizing on evanescent modes such as thermophotovoltaic converters and thermal rectifiers. Their development is, however, limited by the lack of devices enabling radiative transfer between macroscale planar surfaces separated by a nanosize vacuum gap. Here we measure radiative heat transfer for large temperature differences (∼120 K) using a custom-fabricated device in which the gap separating two 5 × 5 mm2 intrinsic silicon planar surfaces is modulated from 3,500 to 150 nm. A substantial enhancement over the blackbody limit by a factor of 8.4 is reported for a 150-nm-thick gap. Our device paves the way for the establishment of novel evanescent wave-based systems. Evanescent coupling between surfaces separated by a distance smaller than the thermal wavelength can lead to radiative heat transfer greater than the blackbody limit. Here, the authors demonstrate this between two macroscopic-scale surfaces, paving the way to harnessing the effect in thermal devices.
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