State-of-the-Art β-Ga(2)O(3) Field-Effect Transistors for Power Electronics.
State-of-the-Art β-Ga(2)O(3) Field-Effect Transistors for Power Electronics.
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DOI：
10.1021/acsomega.2c03345
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发表时间：
2022-10-18
期刊：
影响因子：
4.1
通讯作者：
Tu, Chang-Ching
中科院分区：
文献类型：
--
作者：
Liu, An-Chen;Hsieh, Chi-Hsiang;Langpoklakpam, Catherine;Singh, Konthoujam James;Lee, Wen-Chung;Hsiao, Yi-Kai;Horng, Ray-Hua;Kuo, Hao-Chung;Tu, Chang-Ching
由于电动汽车的出现，电力电子成为新的研究热点。与Si、GaN和SiC等商业化半导体相比，基于β-Ga 2 O3的功率器件能够以更小的尺寸和更高的效率处理高电压，因为它具有超宽带隙（4.9 eV）和大击穿电场（8 MV cm-1）。此外，β-Ga 2 O3块体晶体可以通过相对低成本的熔体生长方法合成，使得单晶衬底和外延层容易用于制造高性能功率器件。本文首先对β-Ga 2 O3的材料特性、晶体生长和沉积方法进行了综述，然后重点介绍了基于β-Ga 2 O3的耗尽型、增强型和纳米膜场效应晶体管（FET）在大功率开关和高频放大应用中的最新进展。同时，将讨论和比较科普β-Ga 2 O3的两个主要问题的器件级方法，即缺乏p型掺杂和相对较低的热导率。
Due to the emergence of electric vehicles, power electronics have become the new focal point of research. Compared to commercialized semiconductors, such as Si, GaN, and SiC, power devices based on β-Ga2O3 are capable of handling high voltages in smaller dimensions and with higher efficiencies, because of the ultrawide bandgap (4.9 eV) and large breakdown electric field (8 MV cm–1). Furthermore, the β-Ga2O3 bulk crystals can be synthesized by the relatively low-cost melt growth methods, making the single-crystal substrates and epitaxial layers readily accessible for fabricating high-performance power devices. In this article, we first provide a comprehensive review on the material properties, crystal growth, and deposition methods of β-Ga2O3, and then focus on the state-of-the-art depletion mode, enhancement mode, and nanomembrane field-effect transistors (FETs) based on β-Ga2O3 for high-power switching and high-frequency amplification applications. In the meantime, device-level approaches to cope with the two main issues of β-Ga2O3, namely, the lack of p-type doping and the relatively low thermal conductivity, will be discussed and compared.
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影响因子：
9.4
作者：
Fornari, R.;Pavesi, M.;Bosi, M.
通讯作者：
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影响因子：
3.2
作者：
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通讯作者：
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影响因子：
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影响因子：
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作者：
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DOI：
10.1002/pssa.202100335
发表时间：
2021-09-03
影响因子：
2
作者：
Bauman, Dmitrii A.;Panov, Dmitrii Iu;Romanov, Alexey E.
通讯作者：
Romanov, Alexey E.