Review of recent advances in inorganic photoresists.
Review of recent advances in inorganic photoresists.
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无机光刻胶最新进展综述
作者：
半导体工业自其世纪前诞生以来，已经见证了逻辑、存储器和其他计算机芯片组件的尺寸的持续减小。特征的缩小在很大程度上是由于先进的可重构技术的发展。这篇评论集中在光刻的一个重要组成部分，抗蚀剂，它本质上是一个薄膜，可以产生一个特定的功能后，曝光和显影过程。更小的特征需要更精确聚焦的光子、电子或离子束来曝光抗蚀剂。用于下一代光刻的有希望的光源是极紫外辐射（EUV），92 eV（13.5 nm），其将使得能够写入缩小尺寸的图案。无机抗蚀剂与传统的有机抗蚀剂相比具有许多优点，本文主要介绍无机抗蚀剂。为了满足大批量半导体制造中的产量要求，已经提出并开发了用于EUV光刻的具有高分辨率和灵敏度的金属氧化物抗蚀剂。介绍了各种无机抗蚀剂的研究进展，并对其性能进行了综述。
The semiconductor industry has witnessed a continuous decrease in the size of logic, memory and other computer chip components since its birth over half a century ago. The shrinking of features has to a large extent been enabled by the development of advanced photolithographic techniques. This review focuses on one important component of lithography, the resist, which is essentially a thin film that can generate a specific feature after an exposure and development process. Smaller features require an even more precisely focused photon, electron or ion beam with which to expose the resist. The promising light source for next generation lithography that will enable downscaling patterns to be written is extreme ultraviolet radiation (EUV), 92 eV (13.5 nm). The review mainly focuses on inorganic resists, as they have several advantages compared with traditional organic resists. In order to satisfy the throughput requirement in high volume semiconductor manufacturing, metal oxide resists with high resolution and sensitivity have been proposed and developed for EUV lithography. The progress of various inorganic resists is introduced and their properties have been summarized.
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