Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)
Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)
复制标题
肖特基接触超级势垒整流器(SSBR)的分析与实验
DOI:
10.1109/led.2017.2703597
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发表时间:
2017-05
影响因子:
4.9
通讯作者:
Zhang Bo
中科院分区:
文献类型:
--
作者:
Chen Wensuo;Liao Ruijin;Zeng Zheng;Zhang Peijian;Zhong Yi;Tan Kaizhou;Chen Hao;Zhang Bo
In this letter, the electrical characteristics of the Schottky contact super barrier rectifier (SSBR) are explained and verified by simulations and experiments. In addition to an MOS channel operating as a super barrier, there is an indirect Schottky contact in the SSBR for electrons. Adjusting both the Schottky contact for coarse adjustment and the super barrier for fine adjustment can improve the tradeoff between the forward voltages and reverse leakage currents. The SSBR exhibits similar Schottky-like electrical characteristics to those of the SBR with ohmic contact presented earlier, except that there is no conductivity modulation for the SSBR, and it still operates in unipolar conducting mode at forward voltages above the p-n junction knee voltage. The measured breakdown voltage of SSBR is 56 V, and the reverse recovery time is approximately30 ns.
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DOI:
10.1109/apec.2000.822831
发表时间:
2000-02
期刊:
APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058)
影响因子:
--
作者:
Z. Xu;B. Zhang;A.Q. Huang
通讯作者:
Z. Xu;B. Zhang;A.Q. Huang
影响因子:
6.7
作者:
Zhenxue Xu;Bo Zhang;A. Huang
通讯作者:
Zhenxue Xu;Bo Zhang;A. Huang
影响因子:
1.7
作者:
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通讯作者:
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DOI:
10.1109/tencon.2009.5395978
发表时间:
2009-11
期刊:
TENCON 2009 - 2009 IEEE Region 10 Conference
影响因子:
--
作者:
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通讯作者:
T. Taufik;Michael McCarthy;S. Watkins;M. Anwari
DOI:
10.1109/tia.2007.912752
发表时间:
2007-05
期刊:
APEC 07 - Twenty-Second Annual IEEE Applied Power Electronics Conference and Exposition
影响因子:
--
作者:
V. Rodov;A. Ankoudinov;T. Taufik
通讯作者:
V. Rodov;A. Ankoudinov;T. Taufik