Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)

Analyses and Experiments of the Schottky Contact Super Barrier Rectifier (SSBR)
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肖特基接触超级势垒整流器(SSBR)的分析与实验

DOI:
10.1109/led.2017.2703597
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发表时间:
2017-05
影响因子:
4.9
通讯作者:
Zhang Bo
Zhang Bo
中科院分区:
工程技术2区
文献类型:
--
作者:
Chen Wensuo;Liao Ruijin;Zeng Zheng;Zhang Peijian;Zhong Yi;Tan Kaizhou;Chen Hao;Zhang Bo

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在这封信中,肖特基接触超势垒整流器(SSBR)的电气特性的解释和验证的模拟和实验。除了作为超级势垒的MOS沟道之外,SSBR中还存在用于电子的间接肖特基接触。调整肖特基接触进行粗调和超级势垒进行微调可以改善正向电压和反向漏电流之间的折衷。SSBR表现出类似于先前呈现的具有欧姆接触的SBR的肖特基状电特性,除了SSBR没有电导率调制,并且它在p-n结拐点电压以上的正向电压下仍然以单极导电模式操作。实验测得SSBR的击穿电压为56 V,反向恢复时间约为30 ns。
In this letter, the electrical characteristics of the Schottky contact super barrier rectifier (SSBR) are explained and verified by simulations and experiments. In addition to an MOS channel operating as a super barrier, there is an indirect Schottky contact in the SSBR for electrons. Adjusting both the Schottky contact for coarse adjustment and the super barrier for fine adjustment can improve the tradeoff between the forward voltages and reverse leakage currents. The SSBR exhibits similar Schottky-like electrical characteristics to those of the SBR with ohmic contact presented earlier, except that there is no conductivity modulation for the SSBR, and it still operates in unipolar conducting mode at forward voltages above the p-n junction knee voltage. The measured breakdown voltage of SSBR is 56 V, and the reverse recovery time is approximately30 ns.
DOI: 10.1109/apec.2000.822831
发表时间: 2000-02
期刊: APEC 2000. Fifteenth Annual IEEE Applied Power Electronics Conference and Exposition (Cat. No.00CH37058)
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