Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode
Ultraviolet electroluminescence properties from devices based on n-ZnO/i-NiO/p-Si light-emitting diode
复制标题
基于 n-ZnO/i-NiO/p-Si 发光二极管的器件的紫外电致发光特性
DOI：
10.1016/j.optcom.2016.01.071
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发表时间：
2017-07
影响因子：
2.4
通讯作者：
Du Guotong
中科院分区：
文献类型：
--
作者：
Wang Hui;Zhao Yang;Wu Chao;Wu Guoguang;Ma Yan;Dong Xin;Zhang Baolin;Du Guotong
We fabricated the Ultraviolet light-emitting diode (LED) based on n-ZnO/i-NiO/p-Si heterostructure by metal-organic chemical vapor deposition (MOCVD). The device exhibited diode-like rectifying characteristics with a turn-on voltage of 3.2 V. The NiO film with high resistance state and [200] preferred orientation acted as an electron blocking layer, which produced a larger ZnO/NiO conduction band offset of 2.93 eV than that of ZnO/Si (0.30 eV). Under forward bias, prominent ultraviolet emissions peaked around 375 nm accompanying with rather weak blue–white emissions peaked around 480 nm were observed at room temperature. Furthermore, the mechanism of the electroluminescence was tentatively discussed in terms of the band diagram of the diode.
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影响因子：
4
作者：
Ye, JD;Gu, SL;Zheng, YD
通讯作者：
Zheng, YD
影响因子：
41.2
作者：
Tsukazaki, A;Ohtomo, A;Kawasaki, M
通讯作者：
Kawasaki, M
磷掺杂 p-ZnO 纳米钉阵列/n-Si 异质结的电驱动紫外激光行为
影响因子：
4
作者：
Zhang, Jun-Yan;Zhang, Qi-Feng;Wu, Jin-Lei
通讯作者：
Wu, Jin-Lei
DOI：
10.1002/pssa.200404803
发表时间：
2004-08-01
影响因子：
2
作者：
Look, DC;Claflin, B;Park, SJ
通讯作者：
Park, SJ
影响因子：
4
作者：
Dong Chan Kim;W. S. Han;H. Cho;B. Kong;H. Kim
通讯作者：
Dong Chan Kim;W. S. Han;H. Cho;B. Kong;H. Kim