Wafer level bonding using localized radio-frequency induction heating
Wafer level bonding using localized radio-frequency induction heating
复制标题
使用局部射频感应加热进行晶圆级键合
DOI：
10.1007/s11431-010-0006-7
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发表时间：
2010-04
影响因子：
4.6
通讯作者：
Chen MingXiang
中科院分区：
文献类型：
--
作者：
Liu WenMing;Liu Sheng;Xi YanYan;Lin ChangYong;Chen MingXiang
A wafer level bonding technique by localized induction heating has been developed and demonstrated in this paper. A suitable fabrication process scheme has also been established for the localized induction heating and bonding. It takes only about 20 seconds to complete the bonding process. The temperatures of solder loops and the central area of solder loops are above 300°C and below 70°C, respectively. Due to the solder reflow, robust and hermetic glass wafer bonding is accomplished, and the average tensile strength is 6.42 MPa. Under-heated or over-heated bonding has been found to result in cracks at bonding interfaces and sputtering layer, which degrades the bonding qualities.
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DOI：
10.1007/s11431-008-0084-y
发表时间：
2008-06
期刊：
Science in China Series E: Technological Sciences
影响因子：
--
作者：
Zuobin Chen;Xiong Jiang;Zhu Zhou;Hanshan Xiao;Yong Huang;Bin Mou;Zhongyun Xiao;Gang Liu;
通讯作者：
Zuobin Chen;Xiong Jiang;Zhu Zhou;Hanshan Xiao;Yong Huang;Bin Mou;Zhongyun Xiao;Gang Liu;
DOI：
10.1117/12.646450
发表时间：
2006-02
期刊：
--
影响因子：
--
作者：
V. Dragoi
通讯作者：
V. Dragoi
影响因子：
--
作者：
Lin, LW
通讯作者：
Lin, LW
影响因子：
2.3
作者：
Hsueh-An Yang;Mingching Wu;W. Fang
通讯作者：
Hsueh-An Yang;Mingching Wu;W. Fang
DOI：
10.1117/12.604579
发表时间：
2005-05
期刊：
--
影响因子：
--
作者：
J. R. Mabesa-;A. J. Scott;X. Wu;G. Auner
通讯作者：
J. R. Mabesa-;A. J. Scott;X. Wu;G. Auner