A zero static power consumption bi-stable RF MEMS switch based on inertial generated timing sequence method
A zero static power consumption bi-stable RF MEMS switch based on inertial generated timing sequence method
复制标题
基于惯性产生时序法的零静态功耗双稳态射频MEMS开关
DOI：
10.1007/s00542-021-05248-7
复制
发表时间：
2022-01
期刊：
影响因子：
--
通讯作者：
边潍
中科院分区：
文献类型：
--
作者：
孙振词;赵嘉昊;边潍
报道了一种新型的静电驱动面内双稳态射频微机电系统开关。利用惯性产生时序（IGTS）方法设计了一种横向RF MEMS开关，该开关仅需一个电压信号就能实现锁存。在开关的设计中，我们在两个相互垂直的杠杆中的一个上应用了质量块，以实现一个非常简单的双稳态过程。与以往的双稳态RF MEMS开关相比，该器件不需要复杂时序的驱动信号来实现锁存。因此，降低了射频系统的硬件复杂度，并且驱动方法变得比以前更容易。得益于双稳态功能，功耗仅在OFF和ON状态之间产生，从而实现零静态功耗。该开关是由硅上玻璃（SOG）的过程中，只有两个光刻掩模。测试结果表明，所制作的RF MEMS开关在38 V工作电压下成功实现了双稳态功能。在6 GHz时，测得的隔离度为− 33.18 dB，而插入损耗低于− 1.9 dB。本文提出的交换机专门用于低功耗、低硬件冗余的无线通信系统。
This paper reports on a novel in-plane and electrostatically actuated bi-stable radio frequency (RF) microelectromechanical systems (MEMS) switch. A lateral RF MEMS switch designed by the inertial generated timing sequence (IGTS) method is able to latch sequentially by only a single voltage signal. In the switch design, we applied a mass block to one of the two mutually perpendicular cantilevers to achieve an extremely simple bi-stable process. Compared with previous bi-stable RF MEMS switches, the proposed device does not require driving signals with complicated timing sequences to realize latch. Therefore, the hardware complexity of RF systems is reduced, and the driving method becomes easier than before. Thanks to the bi-stable function, the power consumption only generates between the OFF and ON state, resulting in zero static power consumption. The switch was fabricated by silicon-on-glass (SOG) processes with only two lithographic masks. Measured results have shown that the manufactured RF MEMS switch successfully realized the bi-stable function at an operating voltage of 38 V. At 6 GHz, the measured isolation was − 33.18 dB, while the insertion loss was below − 1.9 dB. The presented switch in this paper is dedicated for low power consumption and low hardware redundancy wireless communication systems.
登录
查看更多内容
DOI：
10.1007/s00542-017-3684-2
发表时间：
2018-07
期刊：
Microsystem Technologies
影响因子：
--
作者：
Parviz Zolfaghari;Vahid Arzhang;M. Zolfaghari
通讯作者：
Parviz Zolfaghari;Vahid Arzhang;M. Zolfaghari
DOI：
10.1007/s00542-014-2276-7
发表时间：
2014-12
期刊：
Microsystem Technologies
影响因子：
--
作者：
H. Jaafar;K. S. Beh;N. Yunus;W. Z. W. Hasan-W.-Z.-W.-Hasan-2209870460;S. Shafie;O. Sidek
通讯作者：
H. Jaafar;K. S. Beh;N. Yunus;W. Z. W. Hasan-W.-Z.-W.-Hasan-2209870460;S. Shafie;O. Sidek
影响因子：
2.3
作者：
Xin Guo;Z. Gong;Qi Zhong;Xiaotong Liang;Zewen Liu
通讯作者：
Xin Guo;Z. Gong;Qi Zhong;Xiaotong Liang;Zewen Liu
影响因子：
2.3
作者：
S. Kang;H. Kim;K. Chun
通讯作者：
S. Kang;H. Kim;K. Chun
影响因子：
1.5
作者：
Md. Fokhrul Islam;M. Mohd Ali;B. Majlis
通讯作者：
Md. Fokhrul Islam;M. Mohd Ali;B. Majlis