Thermal stability of Pt-Ti bilayer films annealing in vacuum and ambient atmosphere
Thermal stability of Pt-Ti bilayer films annealing in vacuum and ambient atmosphere
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Pt-Ti双层薄膜真空和常压退火的热稳定性
DOI：
10.1016/j.apsusc.2018.03.095
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发表时间：
2018-06
影响因子：
6.7
通讯作者：
Wang Peng
中科院分区：
文献类型：
--
作者：
Weng Sizhe;Qiao Li;Wang Peng
铂/钛双层薄膜的热稳定性决定了薄膜电极在高温等极端条件下工作时的性能。在这项研究中，采用磁控溅射沉积的铂/钛双层薄膜作为模型系统，研究真空和环境气氛中的退火对结构和电阻率变化的影响。结果表明，在两种情况下773K退火时，金属铂是主要相，合金化和扩散仅发生在Pt和Ti的界面处。当温度高于873K时，出现两种不同的结构演化，在真空中，随着退火温度的升高，合金化过程得到促进，金属Pt相转变为TiPt8，最后转变为TiPt3化合物，从而导致电阻率增加。在常压退火中，当钛扩散到薄膜表面时，钛与氧之间的氧化反应抑制了铂与钛之间的合金化过程，此时金属Pt相保留在薄膜中并开始团聚，薄膜中的晶界和空洞等缺陷因再结晶而减少，导致电阻率降低。
The thermal stability of platinum/titanium bilayer film dominates the performance when the film electrodes operate under extreme conditions, such as high temperature. In this study, a platinum/titanium bilayer film deposited by magnetron sputtering was used as a model system to study the influence of annealing in vacuum and ambient atmosphere on structural and electrical resistivity changes. The results show that in both cases blow 773 K annealing the metal platinum is the dominant phase, the alloying and the diffusion happen only at the interface of Pt and Ti. Two different structural evolutions set in when the temperature above 873 K, in vacuum an alloying process promotes with increasing of annealing temperature and metal Pt phase transforms to TiPt8and finally to TiPt3compounds, which leads to the increase of electrical resistivity. In ambient atmosphere annealing, when titanium diffused out to the surface of film, the oxidation reaction between titanium and oxygen suppresses the alloying process between platinum and titanium, in this case the metal Pt phase remains in the film and starts to agglomerate, defects such as grain boundary and voids in film reduced due to the recrystallization, results in the reduction of electrical resistivity.
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影响因子：
2.3
作者：
Q. Cai;Ya-Chi Chen;Chialun Tsai;J. DeNatale
通讯作者：
Q. Cai;Ya-Chi Chen;Chialun Tsai;J. DeNatale
影响因子：
3
作者：
Han, Jie;Cheng, Ping;Ding, Guifu
通讯作者：
Ding, Guifu
反应磁控溅射制备低氮化钨薄膜的热稳定性
影响因子：
3.1
作者：
X.X. Zhang;Y.Z. Wu;B. Mu;L. Qiao;W.X. Li;J.J. Li;P. Wang
通讯作者：
P. Wang
影响因子：
3.2
作者：
U. Schmid
通讯作者：
U. Schmid
影响因子：
5.2
作者：
A. Lahmar;Nicole Pfeiffer;S. Habouti;M. Es‐Souni
通讯作者：
A. Lahmar;Nicole Pfeiffer;S. Habouti;M. Es‐Souni