Design and Fabrication of a Novel Poly-Si Microhotplate with Heat Compensation Structure.

Design and Fabrication of a Novel Poly-Si Microhotplate with Heat Compensation Structure.
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DOI:
10.3390/mi13122090
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发表时间:
2022-11-27
期刊:
影响因子:
3.4
通讯作者:
Yang F
Yang F
中科院分区:
工程技术3区
文献类型:
--
作者:
Lu X;Liu J;Han G;Si C;Zhao Y;Hou Z;Zhang Y;Ning J;Yang F

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I微热板是各种MEMS传感器中的关键器件,可提供适当的工作温度。本文提出了一种新型的多晶硅薄膜微热板的热补偿结构。本文的主要工作是设计和制作多晶硅微热板,并对微热板的热性能和电性能进行研究。采用LPCVD方法制备了多晶硅电阻加热器,并采用原位掺杂工艺对多晶硅进行了磷掺杂,降低了多晶硅电阻。为了获得均匀的温度分布,在电阻加热器的边缘制作了一系列的S形补偿结构。沉积在多晶硅两侧的LPCVD SiNx层被用作机械支撑层和电隔离层。在微热板的顶部制作铂电极,用于温度检测。模拟并测量了不同尺寸器件的温度分布、功耗、热膨胀和响应时间等参数。最后给出了仿真和电热测量结果。对于具有热补偿结构的微热板,在加热功率为148.3 mW、施加电压为5.5 V时,膜温度达到811.7 °C。施加3.8V DC电压以测量温度分布;最高温度为397.6 °C,并且当施加电压为3.8V、加热功率为70.8mW时,温度达到90%的区域覆盖约73.8%。当微热板从室温加热到400 °C时,加热响应时间为17 ms,并且当装置恢复到室温时,冷却响应时间为32 ms。该微热板具有温度分布均匀、功耗低、响应速度快等优点,适用于MEMS气体传感器、湿度传感器、气体流量传感器等。
I Microhotplates are critical devices in various MEMS sensors that could provide appropriate operating temperatures. In this paper, a novel design of poly-Si membrane microhotplates with a heat compensation structure was reported. The main objective of this work was to design and fabricate the poly-Si microhotplate, and the thermal and electrical performance of the microhotplates were also investigated. The poly-Si resistive heater was deposited by LPCVD, and phosphorous doping was applied by in situ doping process to reduce the resistance of poly-Si. In order to obtain a uniform temperature distribution, a series of S-shaped compensation structures were fabricated at the edge of the resistive heater. LPCVD SiNx layers deposited on both sides of poly-Si were used as both the mechanical supporting layer and the electrical isolation layer. The Pt electrode was fabricated on the top of the microhotplate for temperature detection. The area of the heating membrane was 1 mm × 1 mm. Various parameters of the different size devices were simulated and measured, including temperature distribution, power consumption, thermal expansion and response time. The simulation and electrical–thermal measurement results were reported. For microhotplates with a heat compensation structure, the membrane temperature reached 811.7 °C when the applied voltage was 5.5 V at a heating power of 148.3 mW. A 3.8 V DC voltage was applied to measure the temperature distribution; the maximum temperature was 397.6 °C, and the area where the temperature reached 90% covered about 73.8% when the applied voltage was 3.8 V at a heating power of 70.8 mW. The heating response time was 17 ms while the microhotplate was heated to 400 °C from room temperature, and the cooling response time was 32 ms while the device was recovered to room temperature. This microhotplate has many advantages, such as uniform temperature distribution, low power consumption and fast response, which are suitable for MEMS gas sensors, humidity sensors, gas flow sensors, etc.
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