Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization
Polycrystalline silicon films and thin-film transistors using solution-based metal-induced crystallization
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使用基于溶液的金属诱导结晶的多晶硅薄膜和薄膜晶体管
DOI：
10.1109/jdt.2006.878769
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发表时间：
2006-08
影响因子：
--
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中科院分区：
文献类型：
--
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采用溶液基金属诱导晶化法（SMIC）制备了由盘状畴和填隙状畴组成的多晶硅薄膜。多晶硅的霍尔迁移率在碟状畴中比在瓦状畴中高得多。用这两种多晶硅薄膜作为有源层，然后用磷硅玻璃（PSG）镍吸杂，制备了薄膜晶体管（TFT）。碟状畴和填隙状畴多晶硅薄膜晶体管的场效应迁移率分别为70~80 cm 2/Vmiddots和40~50 cm 2/Vmiddots。多栅结构使多晶硅薄膜晶体管的漏电流降低了1~2个数量级。此外，栅致漏漏电流（GIDL）和漏电流分布的均匀性也得到了改善。使用SMIC制造的P型TFT具有优异的可靠性
Polycrystalline silicon (poly-Si) films consisting of dish-like and wadding-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The Hall mobility of poly-Si was much higher in dish-like domains than in wadding-like domains. Thin-film transistors (TFTs) have been prepared using those two kinds of poly-Si films as the active layer, followed by the phosphosilicate glass (PSG) nickel gettering. The field effect mobility of dish-like domain poly-Si TFTs and wadding-like poly-Si TFTs were 70~80 cm2/Vmiddots and 40~50 cm2/Vmiddots, respectively. With a multi-gate structure, the leakage current of poly-Si TFTs was reduced by 1 to 2 orders of magnitude. In addition, the gate-induced drain leakage current (GIDL) and uniformity of the drain current distribution were also improved. P-type TFTs fabricated using SMIC exhibited excellent reliability
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影响因子：
4.9
作者：
Soo Young Yoon;N. Young;P. J. van der Zaag;D. Mcculloch
通讯作者：
Soo Young Yoon;N. Young;P. J. van der Zaag;D. Mcculloch
影响因子：
3.1
作者：
Meng, ZG;Wang, MX;Wong, M
通讯作者：
Wong, M
影响因子：
3.1
作者：
Mingxiang Wang;Z. Meng;M. Wong
通讯作者：
Mingxiang Wang;Z. Meng;M. Wong
影响因子：
3.2
作者：
HAYZELDEN, C;BATSTONE, JL
通讯作者：
BATSTONE, JL
影响因子：
4.3
作者：
J. Choi;J. Cheon;Sang Kyu Kim;Jin Jang
通讯作者：
J. Choi;J. Cheon;Sang Kyu Kim;Jin Jang