Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.
Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.
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DOI：
10.1038/s41598-018-26642-8
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发表时间：
2018-05-25
影响因子：
4.6
通讯作者：
Im H
中科院分区：
文献类型：
--
作者：
Park Y;Chan CCS;Nuttall L;Puchtler TJ;Taylor RA;Kim N;Jo Y;Im H
我们研究了生长在GaN纳米棒顶端的InGaN/GaN量子盘的发射。InGaN量子盘在3.21 eV处的发射没有斯塔克位移，垂直于生长方向激发时呈线偏振。由于纳米结构的各向异性，其线偏振度约为39.3%。为了表征单个纳米结构，将量子盘分散在带有金属参考栅格图案的二氧化硅衬底上。通过将激发极化角从平行到垂直于纳米棒旋转，记录了3.21 eV峰的总发光的变化，清楚地显示了51.5%的线偏振度。
We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn’t show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.
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