A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.
A high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging.
复制标题
基于晶圆级 MEMS 真空封装的具有穿玻璃电气互连的高 Q 谐振压力微传感器
DOI：
10.3390/s141224244
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发表时间：
2014-12-16
期刊：
影响因子：
--
通讯作者：
Chen J
中科院分区：
文献类型：
--
作者：
Luo Z;Chen D;Wang J;Li Y;Chen J
本文提出了一种基于圆片级MEMS真空封装的高Q谐振式压力微传感器。本文提出了一种通过集成MEMS制造工艺和吸气剂材料制备来保持高真空条件的方法。在该装置中，被测压力引起压敏硅方形膜片的偏转，该偏转进一步转化为“H”型双夹持微谐振梁中的应力积累，导致谐振频率偏移。器件的几何形状进行了优化，使用有限元模拟和4英寸的SOI晶片用于器件制造，这只需要三个光刻步骤。在器件制造中，作为吸气剂材料的非蒸发性金属薄膜被溅射在Pyrex 7740玻璃晶片上，然后将其阳极键合到图案化的SOI晶片上用于真空封装。在玻璃晶片中预定义的SOI玻璃通孔用作图案化SOI晶片与周围电气元件之间的电气互连。实验结果表明，谐振梁的Q值大于22,000，微分灵敏度为89.86Hz/kPa，器件分辨率为10 Pa，在50 ~ 100 kPa压力范围内的非线性系数为0.02%F.S。此外，温度漂移系数在−40 °C至70 °C范围内小于−0.01% F.S/°C，长期稳定性误差在5个月内量化为0.01% F.S，微传感器的精度优于0.01% F. S。
This paper presents a high-Q resonant pressure microsensor with through-glass electrical interconnections based on wafer-level MEMS vacuum packaging. An approach to maintaining high-vacuum conditions by integrating the MEMS fabrication process with getter material preparation is presented in this paper. In this device, the pressure under measurement causes a deflection of a pressure-sensitive silicon square diaphragm, which is further translated to stress build up in “H” type doubly-clamped micro resonant beams, leading to a resonance frequency shift. The device geometries were optimized using FEM simulation and a 4-inch SOI wafer was used for device fabrication, which required only three photolithographic steps. In the device fabrication, a non-evaporable metal thin film as the getter material was sputtered on a Pyrex 7740 glass wafer, which was then anodically bonded to the patterned SOI wafer for vacuum packaging. Through-glass via holes predefined in the glass wafer functioned as the electrical interconnections between the patterned SOI wafer and the surrounding electrical components. Experimental results recorded that the Q-factor of the resonant beam was beyond 22,000, with a differential sensitivity of 89.86 Hz/kPa, a device resolution of 10 Pa and a nonlinearity of 0.02% F.S with the pressure varying from 50 kPa to 100 kPa. In addition, the temperature drift coefficient was less than −0.01% F.S/°C in the range of −40 °C to 70 °C, the long-term stability error was quantified as 0.01% F.S over a 5-month period and the accuracy of the microsensor was better than 0.01% F.S.
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影响因子：
4.6
作者：
Kasten, K;Amelung, J;Mokwa, W
通讯作者：
Mokwa, W
DOI：
10.1088/0960-1317/18/2/025018
发表时间：
2008-02-01
影响因子：
2.3
作者：
Lin, Chiung-Wen;Hsu, Chia-Pao;Fang, Weileun
通讯作者：
Fang, Weileun
DOI：
10.1007/s00542-005-0603-8
发表时间：
2005-10-01
影响因子：
2.1
作者：
Choa, SH
通讯作者：
Choa, SH
影响因子：
4.6
作者：
Welham, CJ;Greenwood, J;Bertioli, MM
通讯作者：
Bertioli, MM
影响因子：
4.6
作者：
CABUZ, C;SHOJI, S;ESASHI, M
通讯作者：
ESASHI, M