Electrical characteristics of Au and Ag Schottky contacts on Nb-1.0 wt %-doped SrTiO3
Electrical characteristics of Au and Ag Schottky contacts on Nb-1.0 wt %-doped SrTiO3
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电气%20特性%20of%20Au%20and%20Ag%20肖特基%20触点%20on%20Nb-1.0%20wt%20%-掺杂%20SrTiO3
DOI：
10.1063/1.3512866
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发表时间：
2010-11
影响因子：
3.2
通讯作者：
Wang, Rongming
中科院分区：
文献类型：
--
作者：
Cui, Yimin;Yin, Sheng;Wang, D;an;Xing, Guozhong;Leng, SengHwee;Wang, Rongming
（Au，Ag）/Nb-1.0重量%掺杂的SrTiO 3（NSTO），即，采用磁控溅射和退火工艺制备了Au/NSTO、Ag/NSTO、Ag/Au/NSTO和Au/Ag/NSTO结。在所有制备的样品中观察到反向二极管样行为，并且分别在400 °C、550 °C、700 °C和850 °C下在氧气中退火后，在四个结中逐渐形成正向整流特性。与Ag/NSTO结相比，Au/NSTO结具有更高的温度演化过程。在850 °C退火时，样品出现了理想的肖特基行为，这是由于形成了界面态。X射线光电子能谱和二次离子质谱分析表明，界面态主要来源于金属向NSTO基体的迁移和金属/NSTO界面化学成分的变化。电流-电压测量结果表明，高温退火改变了界面势垒，从而显著改善了漏电流的稳定性。
The (Au,Ag)/Nb-1.0 wt %-doped SrTiO3 (NSTO), i.e., Au/NSTO, Ag/NSTO, Ag/Au/NSTO, and Au/Ag/NSTO junctions were fabricated by magnetic controlled sputtering and annealing process. Backward diodelike behaviors were observed in all as-prepared samples, and forward rectifying characteristics were gradually developed in the four junctions after annealed in oxygen at 400 °C, 550 °C, 700 °C, and 850 °C, respectively. Compared with the Ag/NSTO junctions, the Au/NSTO junctions showed higher temperature evolving procedure of forward rectifying behavior. Moreover, ideal Schottky behaviors appeared in the samples annealed at 850 °C, which were attributed to the formation of interface states. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis showed that the interface states mainly originated from the migration of metal into NSTO matrix and the changes in chemical composition at the metal/NSTO interfaces. The results of current-voltage measurements reveal that annealing at higher temperature alters the interface barrier and thereby ameliorates the stability of leakage current remarkably.
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DOI：
10.1103/physrevb.2.3170
发表时间：
1970-10-15
期刊：
PHYSICAL REVIEW B-SOLID STATE
影响因子：
--
作者：
Sroubek, Z.
通讯作者：
Sroubek, Z.
影响因子：
6.7
作者：
Takashi Shimizu;N. Gotoh;Naoya Shinozaki;H. Okushi
通讯作者：
Takashi Shimizu;N. Gotoh;Naoya Shinozaki;H. Okushi
影响因子：
3.7
作者：
Hikita, Yasuyuki;Nishikawa, Mitsuru;Hwang, Harold Y.
通讯作者：
Hwang, Harold Y.
影响因子：
2.8
作者：
Haruyama, Y;Aiura, Y;Nishihara, Y
通讯作者：
Nishihara, Y
影响因子：
--
作者：
BARDEEN, J
通讯作者：
BARDEEN, J