Towards promising modification of GeSi nanostructures via self-assembly on miscut Si(001) substrates
Towards promising modification of GeSi nanostructures via self-assembly on miscut Si(001) substrates
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通过在误切 Si(001) 基底上自组装实现 GeSi 纳米结构的有前途的改性
DOI：
10.1088/0957-4484/27/11/115601
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发表时间：
2016-02
期刊：
影响因子：
3.5
通讯作者：
Zhong Zhenyang
中科院分区：
文献类型：
--
作者：
Zhou Tong;Zhong Zhenyang
系统地研究了在斜切Si（001）衬底上自组装GeSi纳米结构的斜切角度和方位角、Ge含量以及生长温度等因素。观察到GeSi纳米结构的空间排列（可以表现出一维和二维（1D和2D）有序性）以及形状和密度对错切角的全面依赖性。错切Si（001）衬底上一维GeSi面内纳米线的取向和侧壁与错切方位角（110 °或1010 °）密切相关。此外，还发现了GeSi纳米结构随Ge含量和生长温度的独特演化规律。本文从热力学和生长动力学两个方面解释了在斜切的Si（001）衬底上自组装GeSi纳米结构的这种有前途的特性，这两个方面都受到衬底邻近性的显著影响。这些结果表明，误切基板提供了一个有前途的自由度的自组装纳米结构的可行的修改。
Self-assembled GeSi nanostructures on miscut Si(001) substrates are studied systematically with regard to the miscut angle and azimuth, the amount of Ge and the growth temperature. The comprehensive dependence of the spatial arrangement, which can exhibit one- and two-dimensional (1D and 2D) ordering, as well as the shape and density, of GeSi nanostructures on the miscut angle is observed. The orientation and side-walls of the 1D ordered in-plane GeSi nanowires on miscut Si(001) substrates are intimately associated with the miscut azimuth towards the 〈110〉 or 〈010〉 directions. Furthermore, the unique evolution of the GeSi nanostructures with the amount of Ge and the growth temperature on miscut Si (001) substrates towards the 〈010〉 direction is discovered. Such promising features of self-assembled GeSi nanostructures on miscut Si (001) substrates are explained in terms of the thermodynamics and growth kinetics, which are both affected significantly by the substrate vicinality. These results demonstrate that the miscut substrates offer a promising degree of freedom for the feasible modification of self-assembled nanostructures.
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影响因子：
4
作者：
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通讯作者：
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