Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes
Electroless Silver Plating Reflectors to Boost the Performance of Vertical Light-Emitting Diodes
复制标题
化学镀银反射器可提高垂直发光二极管的性能
DOI：
10.1109/jphot.2016.2580938
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发表时间：
2016-06
影响因子：
2.4
通讯作者：
Li, Jinmin
中科院分区：
文献类型：
--
作者：
Yi, Xiaoyan;Wang, Junxi;Wang, Guohong;Li, Jinmin
在本文中，我们实验证明了一种新的方法称为化学银电镀（ESP）的银只反射器的垂直发光二极管（VLED）的制造。与传统的电子束（EB）法制备的反射率为75%、接触电阻率为6.2 × 10-2 Ω ·cm 2的Ag反射镜相比，ESP法制备的Ag反射镜反射率为83%，接触电阻率为6 × 10-3 Ω ·cm 2。VLED的光输出强度-电流（L-I）和电流-电压（I-V）的改善源于内置ESP-Ag反射器的高反射率和低接触电阻率。我们的结果开辟了一个替代和有前途的方法，以取代传统的电子束方法的Ag基反射镜的制造，因此，在真实的设备制造，如VLED的实际意义。
In this paper, we experimentally demonstrated a novel approach known as electroless silver plating (ESP) for the fabrication of Ag-only reflectors on vertical light-emitting diodes (VLEDs). The Ag reflector that was obtained through the ESP approach shows a higher reflectance of 83% and a lower contact resistivity of 6 * 10-3 Ω · cm2 with p-GaN, compared with that fabricated through the conventional electron beam (EB) approach, which shows a reflectance of 75% and a contact resistivity of 6.2 * 10-2 Ω · cm2, respectively. Improvements in the light output intensity-current (L-I) and current-voltage (I-V) results in VLEDs, which originated from the high reflectance and low-contact resistivity of the incorporated ESP-Ag reflector. Our result opens up an alternative and promising way to substitute the traditional EB approach for Ag-based reflector fabrication and, thus, is practically meaningful in real device fabrication, such as with VLEDs.
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DOI：
10.1109/sslchina.2015.7360679
发表时间：
2015-12
期刊：
2015 12th China International Forum on Solid State Lighting (SSLCHINA)
影响因子：
--
作者：
Qinjin Wang;Jun Ma;Teng Zhan;X. Yi;Enqing Guo;Zhiqiang Liu;Ting Wang;Xiansong Fu;Junxi Wang;Guohong Wang;Jinmin Li
通讯作者：
Qinjin Wang;Jun Ma;Teng Zhan;X. Yi;Enqing Guo;Zhiqiang Liu;Ting Wang;Xiansong Fu;Junxi Wang;Guohong Wang;Jinmin Li
影响因子：
5.1
作者：
Kong Jing;M. Feng;Cai Jin;Hui Wang;Huai-bing Wang;Hui Yang
通讯作者：
Kong Jing;M. Feng;Cai Jin;Hui Wang;Huai-bing Wang;Hui Yang
影响因子：
--
作者：
Dong‐Seok Leem;J. Maeng;D. Lee;T. Seong
通讯作者：
Dong‐Seok Leem;J. Maeng;D. Lee;T. Seong
影响因子：
2.6
作者：
I. Ju;Yongwoo Kwon;C. Shin;Kanghyun Kim;S. Bae;Donghyun Kim;Jehyuk Choi;C. Ko
通讯作者：
I. Ju;Yongwoo Kwon;C. Shin;Kanghyun Kim;S. Bae;Donghyun Kim;Jehyuk Choi;C. Ko
影响因子：
--
作者：
June O. Song;Woong-Ki Hong;H. Hong;Kyoung-Kok Kim;Takhee Lee;T. Seong
通讯作者：
June O. Song;Woong-Ki Hong;H. Hong;Kyoung-Kok Kim;Takhee Lee;T. Seong