Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface
Reducing contact resistance in ferroelectric organic transistors by buffering the semiconductor/dielectric interface
复制标题
通过缓冲半导体/电介质界面来降低铁电有机晶体管的接触电阻
DOI：
10.1063/1.4928534
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发表时间：
2015-08
影响因子：
4
通讯作者：
Yun Li
中科院分区：
文献类型：
--
作者：
Lijia Pan;Youdou Zheng;Yi Shi;Yun Li
报道了通过缓冲界面极化波动来降低铁电有机场效应晶体管（Fe-OFFET）接触电阻的方法。在铁电聚合物和有机半导体层之间插入一层聚甲基丙烯酸甲酯。接触电阻显著降低至55 kΩ cm。相比之下，没有缓冲的Fe-OF 2 O3表现出260 kΩ cm的显著更大的接触电阻。结果表明，这种增强的电荷注入归因于半导体/铁电体界面处的缓冲效应，使接触区中有机半导体的陷阱分布变窄。本文的工作为降低Fe-OFFEs的接触电阻提供了一种有效的方法，有利于Fe-OFFEs的进一步开发。
The reduction of contact resistance in ferroelectric organic field-effect transistors (Fe-OFETs) by buffering the interfacial polarization fluctuation was reported. An ultrathin poly(methyl methacrylate) layer was inserted between the ferroelectric polymer and organic semiconductor layers. The contact resistance was significantly reduced to 55 kΩ cm. By contrast, Fe-OFETs without buffering exhibited a significantly larger contact resistance of 260 kΩ cm. Results showed that such an enhanced charge injection was attributed to the buffering effect at the semiconductor/ferroelectric interface, which narrowed the trap distribution of the organic semiconductor in the contact region. The presented work provided an efficient method of lowering the contact resistance in Fe-OFETs, which is beneficial for the further development of Fe-OFETs.
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影响因子：
3.2
作者：
A. Laudari;S. Guha
通讯作者：
A. Laudari;S. Guha
影响因子：
3.2
作者：
J. Zaumseil;K. Baldwin;J. Rogers
通讯作者：
J. Zaumseil;K. Baldwin;J. Rogers
影响因子：
4.4
作者：
A. Petrović;E. Pavlica;G. Bratina;A. Carpentiero;M. Tormen
通讯作者：
A. Petrović;E. Pavlica;G. Bratina;A. Carpentiero;M. Tormen
影响因子：
4
作者：
Sui‐Dong Wang;T. Minari;T. Miyadera;K. Tsukagoshi;Y. Aoyagi
通讯作者：
Sui‐Dong Wang;T. Minari;T. Miyadera;K. Tsukagoshi;Y. Aoyagi
影响因子：
41.2
作者：
Naber, RCG;Tanase, C;De Leeuw, DM
通讯作者：
De Leeuw, DM