Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD
Ultraviolet electroluminescence from n-ZnO/NiO/p-GaN light-emitting diode fabricated by MOCVD
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MOCVD 制备的 n-ZnO/NiO/p-GaN 发光二极管的紫外电致发光
DOI：
10.1016/j.jlumin.2014.09.007
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发表时间：
2015-02
影响因子：
3.6
通讯作者：
Guotong Du
中科院分区：
文献类型：
--
作者：
Hui Wang;Yang Zhao;Chao Wu;Xin Dong;Baolin Zhang;Guoguang Wu;Yan Ma;Guotong Du
采用金属-有机化学气相沉积(MOCVD)方法制备了n-ZnO/NiO/p-GaN基紫外光发光二极管(LED)。器件表现出二极管整流的电流-电压特性，开启电压为7.5V。优质NiO薄膜作为电子阻挡层插入在ZnO和GaN薄膜之间，表现出[1+1+1]择优取向的高阻态，其导带偏移量为2.93 eV，高于ZnO/GaN(0.15 eV)。N-ZnO/i-NiO/p-GaN异质结的电致发光光谱表明，电子被有效地限制在了氧化锌的有源区，从而导致了来自氧化锌一侧的激子发射的增强。
Ultraviolet light-emitting diodes (LED) based on n-ZnO/NiO/p-GaN were realized by metal-organic chemical vapor deposition (MOCVD). The devices exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 7.5 V. High quality NiO film as an electron blocking layer inserted between the ZnO and GaN films showed high resistance state with preferred [1 1 1] orientation, which produced a larger ZnO/NiO conduction band offset of 2.93 eV than that of ZnO/GaN (0.15 eV). The electroluminescence spectra of the n-ZnO/i-NiO/p-GaN heterostructure demonstrated that electrons were effectively confined in the ZnO active region, and thus leading to the enhancement of the excitonic emission from the ZnO side.
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影响因子：
--
作者：
Abbasi MA;Ibupoto ZH;Hussain M;Nur O;Willander M
通讯作者：
Willander M
在氧化锌中实现的超低阈值激光
影响因子：
29.4
作者：
Zhu, Hai;Shan, Chong-Xin;Tong, Zi-Kang
通讯作者：
Tong, Zi-Kang
影响因子：
4
作者：
Jennifer Wang;Chun-Yu Lee;Yungting Chen;Chung-Tse Chen;Yung-Ling Chen;Ching-Fuh Lin;Y. Chen
通讯作者：
Jennifer Wang;Chun-Yu Lee;Yungting Chen;Chung-Tse Chen;Yung-Ling Chen;Ching-Fuh Lin;Y. Chen
影响因子：
6.2
作者：
Huoming Shu;Jimin Xie;Hui Xu;Hua-ming Li;Zheng Gu;Guangsong Sun;Yuanguo Xu
通讯作者：
Huoming Shu;Jimin Xie;Hui Xu;Hua-ming Li;Zheng Gu;Guangsong Sun;Yuanguo Xu
影响因子：
41.2
作者：
Tsukazaki, A;Ohtomo, A;Kawasaki, M
通讯作者：
Kawasaki, M