Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template
Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template
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AlN/蓝宝石模板上生长的 Al0.65Ga0.35N 反转域边界的透射电子显微镜研究
DOI:
10.1063/1.3231443
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发表时间:
2009-09
影响因子:
4
通讯作者:
Qin, Z. X.
中科院分区:
文献类型:
--
作者:
Yu, D. P.;Shen, B.;Sang, L. W.;You, L. P.;Zhang, X. P.;Yang, Z. J.;Wang, X. Q.;Fang, H.;Zhang, G. Y.;Qin, Z. X.
A kind of inversion domains (IDs) which originated from the tips of threading dislocations were observed in the Al0.65Ga0.35N layer by transmission electron microscopy (TEM). The IDs showed columnar structures with diameters of 10–20 nm. We find that the
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