Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template
Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between AlGaN/GaN multiple quantum wells and a GaN template
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AlGaN/GaN 多量子阱和 GaN 模板之间的应变控制 AlN/GaN 超晶格夹层中埋入裂纹的外延演化
DOI：
10.1088/1674-1056/23/10/106106
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发表时间：
2014-08
影响因子：
1.7
通讯作者：
Shen Bo
中科院分区：
文献类型：
--
作者：
Yang Zhi-Jian;Tang Ning;Wang Xin-Qiang;Shen Bo
研究了应变控制的AlN/GaN超晶格中间层(IL)中埋藏裂纹的外延演化，得到了无裂纹的AlGaN/GaN多量子阱(MQW)。埋藏裂纹的填充过程包括IL中裂纹的形成、裂纹两侧壁的聚结、裂纹上方MQW层驼峰的堆积、MQW与周围MQW的横向扩展和合并以及二维阶跃流生长。证实了埋藏裂纹中的填充物是纯GaN，来源于离子注入后直接沉积的GaN薄层。Ga原子在裂纹中的迁移在填充隐伏裂纹中起着关键作用。
Epitaxial evolution of buried cracks in a strain-controlled AlN/GaN superlattice interlayer (IL) grown on GaN template, resulting in crack-free AlGaN/GaN multiple quantum wells (MQW), was investigated. The processes of filling the buried cracks include crack formation in the IL, coalescence from both side walls of the crack, build-up of an MQW-layer hump above the cracks, lateral expansion and merging with the surrounding MQW, and two-dimensional step flow growth. It was confirmed that the filling content in the buried cracks is pure GaN, originating from the deposition of the GaN thin layer directly after the IL. Migration of Ga adatoms into the cracks plays a key role in the filling the buried cracks.
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影响因子：
3.7
作者：
N. Takeuchi;A. Selloni;T. Myers;A. Doolittle
通讯作者：
N. Takeuchi;A. Selloni;T. Myers;A. Doolittle
影响因子：
20.6
作者：
D. Hofstetter;E. Baumann;F. Giorgetta;R. Théron;Hong Wu;W. Schaff;J. Dawlaty;P. George;L. Eastman;F. Rana;P. Kandaswamy;F. Guillot;E. Monroy
通讯作者：
D. Hofstetter;E. Baumann;F. Giorgetta;R. Théron;Hong Wu;W. Schaff;J. Dawlaty;P. George;L. Eastman;F. Rana;P. Kandaswamy;F. Guillot;E. Monroy
DOI：
10.1002/pssc.200303511
发表时间：
2003-12
期刊：
Physica Status Solidi (c)
影响因子：
--
作者：
T. Narita;T. Hikosaka;Y. Honda;M. Yamaguchi;N. Sawaki
通讯作者：
T. Narita;T. Hikosaka;Y. Honda;M. Yamaguchi;N. Sawaki
影响因子：
4
作者：
Jung-Seung Yang;H. Sodabanlu;M. Sugiyama;Y. Nakano;Y. Shimogaki
通讯作者：
Jung-Seung Yang;H. Sodabanlu;M. Sugiyama;Y. Nakano;Y. Shimogaki
影响因子：
3.2
作者：
Jindal, Vibhu;Shahedipour-Sandvik, Fatemeh
通讯作者：
Shahedipour-Sandvik, Fatemeh