Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.
Sub-10 Nanometer Feature Size in Silicon Using Thermal Scanning Probe Lithography.
复制标题
DOI：
10.1021/acsnano.7b06307
复制
发表时间：
2017-12-26
期刊：
影响因子：
17.1
通讯作者：
Knoll AW
中科院分区：
文献类型：
--
作者：
Ryu Cho YK;Rawlings CD;Wolf H;Spieser M;Bisig S;Reidt S;Sousa M;Khanal SR;Jacobs TDB;Knoll AW
高分辨率光刻通常涉及薄的抗蚀剂层，这对图案表征提出了挑战。如果证明图案转移成功，则提供了图案明确且可用于器械制造的直接证据。在热扫描探针光刻（t-SPL）的情况下，最高的分辨率实现浅图案。在这项工作中，我们研究了传输的可靠性和可实现的分辨率作为施加的温度和力的函数。如果图案深度超过3 nm并且图案化线之间的壁稍微升高，则图案转移是可靠的。使用这种几何形状作为基准，我们研究了10-20 nm半间距密集线的形成作为施加的力和温度的函数。我们发现，最好的图案几何形状是在10600 °C的加热器温度下获得的，该加热器温度低于或接近从机械压痕到热蒸发的转变。在该温度下，抗蚀剂仍然存在相当大的塑性变形，这导致在紧密间距下图案深度的减小，因此限制了可实现的分辨率。通过优化图案化条件，我们在HM 8006转移层中实现了11 nm半间距密集线，在硅中实现了14 nm半间距密集线和L线。对于硅中的14 nm半间距线，我们测量到2.6 nm（3σ）的线边缘粗糙度和7 nm的图案化壁的特征尺寸。
High-resolution lithography often involves thin resist layers which pose a challenge for pattern characterization. Direct evidence that the pattern was well-defined and can be used for device fabrication is provided if a successful pattern transfer is demonstrated. In the case of thermal scanning probe lithography (t-SPL), highest resolutions are achieved for shallow patterns. In this work, we study the transfer reliability and the achievable resolution as a function of applied temperature and force. Pattern transfer was reliable if a pattern depth of more than 3 nm was reached and the walls between the patterned lines were slightly elevated. Using this geometry as a benchmark, we studied the formation of 10–20 nm half-pitch dense lines as a function of the applied force and temperature. We found that the best pattern geometry is obtained at a heater temperature of ∼600 °C, which is below or close to the transition from mechanical indentation to thermal evaporation. At this temperature, there still is considerable plastic deformation of the resist, which leads to a reduction of the pattern depth at tight pitch and therefore limits the achievable resolution. By optimizing patterning conditions, we achieved 11 nm half-pitch dense lines in the HM8006 transfer layer and 14 nm half-pitch dense lines and L-lines in silicon. For the 14 nm half-pitch lines in silicon, we measured a line edge roughness of 2.6 nm (3σ) and a feature size of the patterned walls of 7 nm.
登录
查看更多内容
影响因子：
2.3
作者：
Han, YC;Schmitt, S;Friedrich, K
通讯作者：
Friedrich, K
影响因子：
3.5
作者：
Albisetti, E.;Carroll, K. M.;Riedo, E.
通讯作者：
Riedo, E.
影响因子：
1.4
作者：
Morecroft, Debbie;Yang, Joel K. W.;Williams, R. Stanley
通讯作者：
Williams, R. Stanley
影响因子：
17.1
作者：
Rawlings, Colin;Wolf, Heiko;Knoll, Armin W.
通讯作者：
Knoll, Armin W.
影响因子：
3.2
作者：
Spieser, M.;Rawlings, C.;Knoll, A. W.
通讯作者：
Knoll, A. W.