Nucleation and growth of TiSi2 thin films deposited on glass by atmospheric pressure chemical vapor deposition
Nucleation and growth of TiSi2 thin films deposited on glass by atmospheric pressure chemical vapor deposition
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常压化学气相沉积在玻璃上沉积 TiSi2 薄膜的成核和生长
DOI：
10.1063/1.2472274
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发表时间：
2007-02
影响因子：
3.2
通讯作者：
Du, Piyi
中科院分区：
文献类型：
--
作者：
Huang, Yanfei;Weng, Wenjian;Xu, Ming;Wang, Jianxun;Han, Gaorong;Du, Jun;Song, Chenlu;Hao, Peng;Shen, Ge;Du, Piyi
以SiH4和TiCl4为前驱体，采用常压化学气相沉积法在玻璃衬底上制备了硅化钛（TiSi2）薄膜。薄膜的相结构由x射线衍射法确定。用场发射扫描电子显微镜观察了薄膜的表面形貌和厚度，用四探针法测量了薄膜的方阻。结果表明，TiSi2薄膜为面心正交结构。由于非晶玻璃衬底的影响，在衬底上首先形成非晶层，然后在其上生长TiSi2晶相，随着沉积时间的延长，TiSi2晶相的厚度和含量增加，薄膜的电阻率降低。此外，随着沉积温度的升高，TiSi 2晶相的生长速率和尺寸增加。随着沉积温度的升高，叠层密度降低。
Titanium silicide (TiSi2) thin films were prepared on glass substrate by atmospheric pressure chemical vapor deposition using SiH4 and TiCl4 as the precursors. The phase structure of the thin films was identified by x-ray diffractometry. The surface morphology and thickness of the thin films were observed by field emission scannig electron microscopy and the sheet resistance of the thin films was measured using the four point probe method. The results show that the TiSi2 thin films are formed in a face-centered orthorhombic structure. Due to the influence of the amorphous glass substrate, an amorphous layer is initially formed on the substrate and the TiSi2 crystalline phase grows on top of it. As the thickness and content of TiSi2 crystalline phase increase with deposition time, the resistivity of the thin film decreases. Besides, the growth rate and thus the size of TiSi2 crystalline phase increase as the deposition temperature increases. The stack density decreases when the deposition temperature incre...
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影响因子：
6.7
作者：
K. Ezoe;H. Kuriyama;Takashi Yamamoto;S. Ohara;S. Matsumoto
通讯作者：
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影响因子：
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影响因子：
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作者：
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通讯作者：
L. Clevenger;J. Harper;C. Cabral;C. Nobili;G. Ottaviani;R. Mann
影响因子：
1.7
作者：
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通讯作者：
K. Varahramyan;E. Verret