Properties of indium tin oxide films deposited by RF magnetron sputtering at various substrate temperatures
Properties of indium tin oxide films deposited by RF magnetron sputtering at various substrate temperatures
复制标题
不同衬底温度下射频磁控溅射沉积的氧化铟锡薄膜的性能
DOI：
10.1049/mnl.2012.0454
复制
发表时间：
2012-09
期刊：
影响因子：
--
通讯作者：
Cheng Shuying
中科院分区：
文献类型：
--
作者：
Long Bo;Cheng Shuying
多晶氧化铟锡（ITO）是薄膜太阳能电池、数字显示器等领域的重要透明导电氧化层材料。采用射频磁控溅射法在浮法玻璃基片上沉积ITO薄膜，在不同的基片温度（50-175°C）下，放电功率为60 W，工作气压为0.25 Pa。 通过X射线衍射、扫描电镜分析、光学和电学测试对ITO薄膜进行了表征。ITO薄膜的结构、光学和电学性质显示出强烈的衬底温度依赖性。结构和电学测量结果表明，施主杂质是由于Sn取代In位，导致晶格膨胀。随着温度从50 ° C升高到175°C，择优晶向从[222]变为[100]，可见光波段的透过率超过80%，电阻率降低到7.32×10−4 Ω.cm（175°C衬底温度）。 但是，随着衬底温度的升高，光学带隙略有增加。
Polycrystalline indium tin oxide (ITO) is one of the important materials as transparent conducting oxide layer in thin film solar cells, digital displays and other similar applications. In this study, ITO films were deposited onto float glass substrates by RF magnetron sputtering method at different substrate temperatures (50–175°C) with discharge power of 60 W and work pressure of 0.25 Pa. The ITO films were characterised by X-ray diffraction, scanning electron microscope analysis, optical and electrical measurement. The structural, optical and electrical properties of the ITO films show a strong dependence on the substrate temperatures. The structural and electrical measurement results indicate that the donor impurities are due to the substitution of Sn into In sites, which causes an expansion of the lattice. As the temperature is increased from 50 to 175°C, the preferred crystal orientation changes from [222] to [100], the transmittance in the visible wave band is beyond 80%, and the electrical resistivity decreases to 7.32×10−4 Ω.cm at 175°C substrate temperature. However, the optical bandgap is slightly increasing with the increasing of the substrate temperature.
登录
查看更多内容
影响因子：
2.1
作者：
A. Masuda;S. Usui;Y. Yamanaka;Y. Yonezawa;T. Minamikawa;Michio Suzuki;A. Morimoto;M. Kumeda;T. Shimizu
通讯作者：
A. Masuda;S. Usui;Y. Yamanaka;Y. Yonezawa;T. Minamikawa;Michio Suzuki;A. Morimoto;M. Kumeda;T. Shimizu
影响因子：
5.4
作者：
S. Bhagwat;R. Howson
通讯作者：
S. Bhagwat;R. Howson
影响因子：
2.1
作者：
P. K. Nair;J. Cardoso;O. G. Daza;M. Nair
通讯作者：
P. K. Nair;J. Cardoso;O. G. Daza;M. Nair
影响因子：
2.1
作者：
Meng, LJ;dos Santos, MP
通讯作者：
dos Santos, MP
影响因子：
6.7
作者：
Nisha, M;Anusha, S;Jayaraj, MK
通讯作者：
Jayaraj, MK