A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures.
A comprehensive review of semiconductor ultraviolet photodetectors: from thin film to one-dimensional nanostructures.
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DOI：
10.3390/s130810482
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发表时间：
2013-08-13
期刊：
影响因子：
--
通讯作者：
Sumiya M
中科院分区：
文献类型：
--
作者：
Sang L;Liao M;Sumiya M
紫外光电探测器在工业、环境乃至生物领域的广泛应用引起了人们的广泛关注。与紫外光增强的Si光电探测器相比，新一代宽禁带半导体，如（Al, In） GaN，金刚石和SiC，具有高响应率，高热稳定性，强辐射硬度和高响应速度的优点。另一方面，具有宽带隙的一维（1D）纳米结构半导体，如β-Ga2O3， GaN， ZnO或其他金属氧化物纳米结构，也显示出其高效紫外光探测的潜力。在某些情况下，例如火焰检测，需要高性能的高温热稳定探测器。本文综述了近年来紫外光探测领域的研究进展，不仅包括半导体薄膜，还包括在探测领域越来越受到关注的一维纳米结构材料。特别关注所开发器件的热稳定性，这是实际应用的关键特性之一。
Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications.
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影响因子：
29.4
作者：
Fang, Xiaosheng;Bando, Yoshio;Golberg, Dmitri
通讯作者：
Golberg, Dmitri
影响因子：
2.5
作者：
Bai, Xiaogang;Guo, Xiangyi;Campbell, Joe C.
通讯作者：
Campbell, Joe C.
影响因子：
2.1
作者：
Biondo, S.;Lazar, M.;Planson, D.
通讯作者：
Planson, D.
影响因子：
3.2
作者：
Carrano, JC;Li, T;Campbell, JC
通讯作者：
Campbell, JC
影响因子：
3.5
作者：
Bugallo, Andres de Luna;Tchernycheva, Maria;Tu, Li-Wei
通讯作者：
Tu, Li-Wei