Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes.
Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes.
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采用石墨烯作为底部电极的超薄结构透明柔性电容器
DOI：
10.3390/nano7120418
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发表时间：
2017-11-28
期刊：
影响因子：
--
通讯作者：
Liu C
中科院分区：
文献类型：
--
作者：
Guo T;Zhang G;Su X;Zhang H;Wan J;Chen X;Wu H;Liu C
以石墨烯为底电极，在聚萘二甲酸乙二醇酯（PEN）衬底上直接制备了超薄、透明、柔性电容器。通过原子层沉积（ALD）在石墨烯的处理表面上沉积ZrO 2介电膜。如拉曼测量所示，沉积过程没有在石墨烯中引入任何可检测的缺陷，从而保证了石墨烯电极的电性能。采用ALD技术制备了掺铝氧化锌（AZO）薄膜作为上电极。该电容器具有高电容密度（10 kHz时为10.3 fF/μm2）和相对较低的漏电流（1 V时为5.3 × 10−6 A/cm 2）。弯曲测试表明，电容器能够在10 mm的向外弯曲半径下正常工作，而没有任何电性能的劣化。该电容器在可见光波长下表现出接近70%的平均光学透射率。因此，它为透明集成电路的实际应用打开了大门。
Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN) substrates. ZrO2 dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD). The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO) films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm2 at 10 kHz) and a relatively low leakage current (5.3 × 10−6 A/cm2 at 1 V). Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits.
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