Controllable Fabrication of Non-Close-Packed Colloidal Nanoparticle Arrays by Ion Beam Etching.
Controllable Fabrication of Non-Close-Packed Colloidal Nanoparticle Arrays by Ion Beam Etching.
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通过离子束蚀刻可控制备非密堆积胶体纳米颗粒阵列
DOI：
10.1186/s11671-018-2586-2
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发表时间：
2018-06-11
影响因子：
--
通讯作者：
Yang Y
中科院分区：
文献类型：
--
作者：
Yang J;Zhang M;Lan X;Weng X;Shu Q;Wang R;Qiu F;Wang C;Yang Y
采用离子束刻蚀技术制备了非密排的聚苯乙烯（PS）纳米粒子薄膜。研究了刻蚀时间、束流和电压对PS颗粒尺寸减小的影响。对于直径为100 nm的纳米球，获得了约9.2 nm/min的缓慢蚀刻速率。随着刻蚀时间的增加，速率并不保持恒定。这可能是由于离子束在长时间轰击中逐渐积累的热能所致。刻蚀速率随束流的增加呈非线性增加，随束流电压的增加先增加后达到饱和。PS纳米粒子的粒径可以控制在34 ~ 88 nm之间。基于PS纳米颗粒的非密排阵列，采用金属辅助化学刻蚀技术制备了平均直径为54 nm的有序硅纳米柱。我们的研究结果为制备尺寸小于100 nm的有序纳米结构提供了一条有效的途径。
Polystyrene (PS) nanoparticle films with non-close-packed arrays were prepared by using ion beam etching technology. The effects of etching time, beam current, and voltage on the size reduction of PS particles were well investigated. A slow etching rate, about 9.2 nm/min, is obtained for the nanospheres with the diameter of 100 nm. The rate does not maintain constant with increasing the etching time. This may result from the thermal energy accumulated gradually in a long-time bombardment of ion beam. The etching rate increases nonlinearly with the increase of beam current, while it increases firstly then reach its saturation with the increase of beam voltage. The diameter of PS nanoparticles can be controlled in the range from 34 to 88 nm. Based on the non-close-packed arrays of PS nanoparticles, the ordered silicon (Si) nanopillars with their average diameter of 54 nm are fabricated by employing metal-assisted chemical etching technique. Our results pave an effective way to fabricate the ordered nanostructures with the size less than 100 nm.
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