A Solution to Press-Pack Packaging of SiC MOSFETS
A Solution to Press-Pack Packaging of SiC MOSFETS
复制标题
SiC MOSFET 压装封装解决方案
DOI：
10.1109/tie.2017.2686365
复制
发表时间：
2017-03
影响因子：
7.7
通讯作者：
Glover Michael D.
中科院分区：
文献类型：
--
作者：
Zhu Nan;Mantooth H. Alan;Xu Dehong;Chen Min;Glover Michael D.
本文提出了一种SiC MOSFET的封装方法，为SiC MOSFET的压装封装提供了一种可行的解决方案，以拓展SiC器件在大功率领域的应用。分析了SiC MOSFET实现压装封装所面临的挑战，提出了适合SiC MOSFET特殊要求的解决方案。为了实现SiC MOSFET上的压力接触，在低剖面中介层中使用称为“绒毛按钮”的微型柔性压销来实现管芯顶侧连接。由于压力包装不提供有源器件和稳压器之间的内部绝缘，稳压器被包括在电源回路中。为了避免由散热器引入的大的寄生回路电感，开发了具有低厚度同时保持足够的散热效率的微通道散热器。给出了压装式SiC MOSFET的结构和组装工艺流程。研制了一种具有两个压包和三个热沉的半桥堆原型。通过仿真和测试对压装和半桥叠层的热性能和电性能进行了评估，以验证所提出的封装方法的可行性。
This paper proposes a packaging method for SiC MOSFETs that provides a feasible solution of implementing press-pack packaging on SiC MOSFETs to extend the application of SiC devices into the high power range. The challenges in realizing press-pack packaging of SiC MOSFETs are addressed, and the solutions are proposed that fit the specific requirements of SiC MOSFET. To achieve pressure contact on SiC MOSFETs, miniature and flexible press pins called “fuzz buttons” are used in a low-profile interposer to realize die top side connection. Since the press-pack does not provide internal insulation between the active device and the heatsink, the heatsink is included in the power loop. To avoid large parasitic loop inductance being introduced by the heatsinks, a microchannel heatsink is developed which has a low thickness while remaining adequate heat dissipation efficiency. The structure and assembly process flow of the press-pack SiC MOSFET are provided. A half-bridge stack prototype with two press-packs and three heatsinks is developed. The thermal and electrical performances of the press-pack and the half-bridge stack are evaluated by simulations and tests to validate the feasibility of the proposed packaging approach.
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影响因子：
3.1
作者：
Y. Takahashi;T. Koga;H. Kirihata;Y. Seki
通讯作者：
Y. Takahashi;T. Koga;H. Kirihata;Y. Seki
DOI：
10.1109/ispsd.1997.601422
发表时间：
1997-05
期刊：
Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
影响因子：
--
作者：
H. Matsuda;M. Hiyoshi;N. Kawamura
通讯作者：
H. Matsuda;M. Hiyoshi;N. Kawamura
影响因子：
--
作者：
Satish Gunturi;Daniel Schneider
通讯作者：
Satish Gunturi;Daniel Schneider
DOI：
10.1109/epe.2007.4417648
发表时间：
2007-09
期刊：
2007 European Conference on Power Electronics and Applications
影响因子：
--
作者：
R. Jakob;C. Keller;B. Gollentz
通讯作者：
R. Jakob;C. Keller;B. Gollentz
影响因子：
6.7
作者：
Wang, Jianjing;Chung, Henry Shu-hung;Li, River Tin-ho
通讯作者：
Li, River Tin-ho