Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film
Ultra-multiple and reproducible resistance levels based on intrinsic crystallization properties of Ge1Sb4Te7 film
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基于 Ge1Sb4Te7 薄膜固有结晶特性的超多且可重复的电阻水平
DOI：
10.1016/j.apsusc.2016.02.057
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发表时间：
2016-04
影响因子：
6.7
通讯作者：
Qi Yu
中科院分区：
文献类型：
--
作者：
Tao Wang;Jingze Li;Yang Liu;Qi Yu
采用Ge1Sb4Te7（GST147）作为多电阻级的存储介质。结果表明，随着退火温度的升高，GST147的电阻率因结晶而逐渐下降约3-4个数量级，这是实现多电阻级的关键。通过对TiSi3/GST147横向相变存储器件的最大扫描电流进行编程，简单地演示了TiSi3/GST147横向相变存储器件的超倍27电阻电平。此外，还证明了6个抗性水平的可重复性，并且这些抗性水平彼此可区分。本研究表明GST147是一种适合稳定的超多层存储的介质，可以实现低成本的超高密度非易失性存储器。
Ge1Sb4Te7(GST147) was adopted as the storage media for multiple resistance levels. It was exhibited that the resistivity of GST147 gradually dropped by about 3–4 orders of magnitude due to crystallization with the annealing temperature, which is critical to realize multiple resistance levels. The ultra-multiple 27 resistance levels in TiSi3/GST147 lateral phase-change memory device were demonstrated simply by controlling the maximum sweeping currents for programming the device resistance. Furthermore, the reproducibility of the six resistance levels was demonstrated and these levels were distinguishable from each other. This studyindicatesthat GST147 is a media suitable for stable ultra-multiple level storage, enabling low-cost ultrahigh-density nonvolatile memory.
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影响因子：
4
作者：
F. Rao;Zhitang Song;K. Ren;Xuelai Li;Liangcai Wu;W. Xi;Bo Liu
通讯作者：
F. Rao;Zhitang Song;K. Ren;Xuelai Li;Liangcai Wu;W. Xi;Bo Liu
影响因子：
1.5
作者：
Cheng, Xiaonong;Mao, Fuxiang;Gong, Yuefeng
通讯作者：
Gong, Yuefeng
影响因子：
--
作者：
J. M. Yoon;H. Jeong;S. Hong;Y. Yin;H. Moon;Seong-Jun Jeong;J. Han;Yong In Kim;Yong-Tae Kim;Heon-Kyu Lee;S. Kim;J. Y. Lee
通讯作者：
J. M. Yoon;H. Jeong;S. Hong;Y. Yin;H. Moon;Seong-Jun Jeong;J. Han;Yong In Kim;Yong-Tae Kim;Heon-Kyu Lee;S. Kim;J. Y. Lee
影响因子：
2.3
作者：
Y. Yin;H. Sone;S. Hosaka
通讯作者：
Y. Yin;H. Sone;S. Hosaka
影响因子：
29.4
作者：
Cavallini, Massimiliano;Hemmatian, Zahra;Murgia, Mauro
通讯作者：
Murgia, Mauro