Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm
Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm
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基于 PtSe2/硅纳米线阵列异质结的超快灵敏光电探测器，具有 200 至 1550 nm 的多波段光谱响应
DOI：
10.1038/s41427-018-0035-4
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发表时间：
2018-04
影响因子：
9.7
通讯作者：
Tsang Yuen Hong
中科院分区：
文献类型：
--
作者：
Zeng Longhui;Lin Shenghuang;Lou Zhenhua;Yuan Huiyu;Long Hui;Li Yanyong;Lu Wei;Lau Shu Ping;Wu Di;Tsang Yuen Hong
新发现的10族过渡金属二卤化物(TMD)，如PtSe2，由于其高的载流子迁移率、广泛的可调带和超稳定性，在高性能微电子和光电子器件中具有广阔的应用前景。然而，与硅集成的宽带PtSe2光电探测器的光电性能仍未被发现。本文报道了用简单的硒化方法成功地制备了大规模、均匀和垂直生长的PtSe2薄膜，用于设计PtSe2/Si纳米线阵列异质结，它具有很好的光响应率12.65 A/W，在−5 V时的高比探测率为2.5 ×−1013 jones，在10 μkHz时的快速上升/下降时间为10.1/19.5 S，并且能够响应高达120 kHz的高频。我们的工作证明了PtSe2与现有的硅技术以及从深紫外光到光通信波长的超宽带探测的兼容性，这在很大程度上可以覆盖硅探测器的局限性。对该器件的进一步研究发现，该器件在0 V时表现出明显的光伏行为，使其能够作为自供电的光电探测器运行。总体而言，这种具有代表性的基于PtSe2/Si纳米线阵列的光电探测器在下一代光电子和电子器件中具有巨大的应用潜力。光电探测器：2D薄膜代表宽带使用硅纳米线对准超薄半导体，使其能够对异常广泛的紫外线、可见光和红外光频率进行高速传感。硅纳米线的形状使其能够比传统薄膜更快、更有效地进行光检测，但它们的光谱响应仍然超出了各种应用所需的参数，包括光通信。由中国郑州大学的吴迪和香港理工大学的袁宏增领导的研究人员转向了类石墨烯硒铂(PtSe2)薄膜的宽带吸收，以延长光敏性。为了平行于纳米线的几何形状，该团队使用精密沉积技术将2D PtSe2薄膜生长成垂直取向的层，厚度达数十纳米。将PtSe2薄膜直接转移到大规模的纳米线阵列上，产生了对多个光谱带敏感的微秒级快速器件。铂二硒化物(PtSe2)是一种新发现的10族过渡金属二卤化物(TMD)，具有独特的电子性质，特别是半金属到半导体的转变。在这项工作中，我们已经实现了基于混合异质结的垂直站立的层状结构的PtSe2纳米薄膜，具有高的整体性能，用于200 nm到1550 nm的宽带光探测。高性能宽带光电探测器将为下一代二维10族材料光电子器件的发展开辟一条新的途径。
The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at −5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.Photodetectors: 2D films take a stand for broadbandAligning ultra-thin semiconductors with silicon nanowires enables high-speed sensing of an unusually broad range of ultraviolet, visible, and infrared light frequencies. The shapes of silicon nanowires enable quicker and more effective light detection than conventional thin films, but their spectral response still falls outside the parameters needed for various applications, including optical telecommunication. Researchers led by Di Wu from China’s Zhengzhou University and Yuen Hong Tsang at Hong Kong Polytechnic University turned to the broadband absorption of graphene-like platinum selenide (PtSe2) films to extend the light sensitivity. To parallel the geometry of nanowires, the team used precision deposition techniques to grow 2D PtSe2 films into vertically-oriented layers, some tens of nanometers thick. Direct transfer of the PtSe2 film onto a large-scale nanowire array produced a microsecond-fast device sensitive to multiple optical bands.Platinum diselenide (PtSe2) is a newly discovered Group-10 transition metal dichalcogenide (TMD) which has unique electronic properties, in particular a semimetal-to-semiconductor transition. In this work, we have demonstrated the proposed vertically standing layered structure PtSe2 nanofilms based on hybrid heterojunction with high overall performance was realized for broadband light photodetection ranging from 200 nm to 1550 nm. The high-performance broadband photodetector will open up a new pathway for the development of next-generation two dimensional Group-10 materials based optoelectronic devices.
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