High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.
High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.
复制标题
基于并五苯/P13/并五苯有机半导体异质结构作为电荷传输层和捕获层的高性能非易失性有机场效应晶体管存储器
DOI：
10.1002/advs.201700007
复制
发表时间：
2017-08
期刊：
影响因子：
--
通讯作者：
Huang W
中科院分区：
文献类型：
--
作者：
Li W;Guo F;Ling H;Zhang P;Yi M;Wang L;Wu D;Xie L;Huang W
提出了基于并五苯/N，N′-ditridecylperylene-3，4，9，10-tetracarboxylic diimide（P13）/并五苯三层有机异质结构的非易失性有机场效应晶体管（OFET）存储器件。嵌入p型并五苯层中的不连续n型P13不仅可以在半导体层中提供电子，促进电子捕获过程;它还可以作为电荷捕获位点，这归因于量子阱状并五苯/P13/并五苯有机异质结构。不连续P13中的电荷俘获和聚（4-乙烯基苯酚）（PVP）层的电荷俘获性质的协同效应显著地改善了存储器性能。此外，三层有机异质结构也已成功地应用于多层和柔性非易失性存储器件。这些结果为实现高性能非易失性OFET存储器件提供了一种新的设计策略，并为各种有机半导体材料在OFET存储器中的不同组合提供了潜在的应用。
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well‐like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge‐trapping property of the poly(4‐vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high‐performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.
登录
查看更多内容
影响因子：
13.3
作者：
Han, Su-Ting;Zhou, Ye;Roy, V. A. L.
通讯作者：
Roy, V. A. L.
影响因子：
41.2
作者：
Asadi, Kamal;De Leeuw, Dago M.;Blom, Paul W. M.
通讯作者：
Blom, Paul W. M.
影响因子：
19
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
通讯作者：
Kim, Dong-Yu
影响因子：
29.4
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
通讯作者：
Kim, Dong-Yu
影响因子：
3.2
作者：
Debucquoy, M.;Rockele, M.;Heremans, P.
通讯作者：
Heremans, P.