Microstructure and defect investigations of the as-grown and annealed ZnO/Si thin films
Microstructure and defect investigations of the as-grown and annealed ZnO/Si thin films
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生长和退火 ZnO/Si 薄膜的微观结构和缺陷研究
DOI：
10.1063/1.2773633
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发表时间：
2007-09
影响因子：
3.2
通讯作者：
He, Haiping
中科院分区：
文献类型：
--
作者：
Zhao, Binghui;Huang, Jingyun;Ye, Zhizhen;Lu, Huanming;Wang, Lei;He, Haiping
利用高分辨透射电子显微镜（HRTEM）研究了ZnO/Si薄膜的微观结构和缺陷。横截面的明场TEM图像表明，ZnO薄膜由柱状晶粒组成。选区电子衍射表明，ZnO/Si薄膜为c轴取向，ZnO（0001）方向相对于生长方向的偏离角沿着不超过5°。晶界可分为三种类型：小角度晶界、具有（101 <$0）小面结构的30度附近的晶界和大角度晶界。除了晶界，生长和退火工艺缺陷也通过HRTEM进行了研究。在600 °C退火可以改善ZnO/Si薄膜的晶体质量。然而，在800 °C的过高退火温度下，形成新产生的加工缺陷，例如三层堆垛层错和双层堆垛层错。这项研究是……
The microstructure and defects of as-grown and annealed ZnO/Si thin films were investigated by high-resolution transmission electron microscopy (HRTEM). The cross-sectional bright-field TEM images showed that the ZnO thin films consisted of columnar grains. The selected-area electron diffraction pattern showed that the ZnO/Si thin film were c-axis oriented and the deviation angle along the ZnO (0001) direction with respect to the growth direction was no more than 5°. The grain boundaries can be classified into three types: low-angle boundaries, boundaries near a 30 deg angle with (101¯0) facet structures and large-angle boundaries. In addition to grain boundary, the as-grown and annealing processing defects were also investigated by HRTEM. The crystal quality of the ZnO/Si thin films can be improved by annealing at 600 °C. However, at too high an annealing temperature of 800 °C, the newly produced processing defects such as three layer stacking fault and double stacking fault were formed. The research was...
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影响因子：
4
作者：
Soohwan Jang;Jau-Jiun Chen;B. S. Kang;F. Ren;D. Norton;S. Pearton;J. Lopata;W. Hobson
通讯作者：
Soohwan Jang;Jau-Jiun Chen;B. S. Kang;F. Ren;D. Norton;S. Pearton;J. Lopata;W. Hobson
影响因子：
1.5
作者：
A. Suzuki;T. Matsushita;N. Wada;Y. Sakamoto;M. Okuda
通讯作者：
A. Suzuki;T. Matsushita;N. Wada;Y. Sakamoto;M. Okuda
影响因子：
3.7
作者：
V. Potin;P. Ruterana;G. Nouet;R. Pond;H. Morkoç
通讯作者：
V. Potin;P. Ruterana;G. Nouet;R. Pond;H. Morkoç
影响因子：
8.6
作者：
Look, DC;Hemsky, JW;Sizelove, JR
通讯作者：
Sizelove, JR
影响因子：
1.8
作者：
Ogata, K;Sakurai, K;Matsushige, K
通讯作者：
Matsushige, K