The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor
复制标题
AlGaN/GaN液体传感器封装的漏电机理
DOI：
10.3390/ma13081903
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发表时间：
2020-04
期刊：
影响因子：
3.4
通讯作者：
Sheng Kuang
中科院分区：
文献类型：
--
作者：
Zhang Hanyuan;Yang Shu;Sheng Kuang
基于宽禁带氮化镓(GaN)的器件在光电子学、电力电子学和传感应用方面引起了人们的极大关注。AlGaN/GaN基传感器具有高密度和高迁移率的二维电子气(2DEG)特性，已被证明是液体环境中有效的化学传感器和生物传感器。限制AlGaN/GaN液体传感器广泛应用的关键因素之一是封装可靠性问题。在磷酸盐缓冲溶液中，对5-μm金属表面的三种传感器封装材料(SiO_2/Si_3N_4、PI和SiO_2/Si_3N_4/PI)的可靠性进行了测试。通过对I-V特性的分析，发现不同区域的泄漏电流遵循不同的泄漏模型，从而确定了限制泄漏电流的关键因素。此外，还对封装失效的物理机制进行了说明。SiO_2/Si3N_4封装的失败是由于其多孔结构，使得溶液中的离子可以渗透到封装材料中并降低其电阻率。PI封装在相对较低的电压(<；3V)下失效的主要原因是PI与AlGaN表面的粘附性差，使得溶液可以通过“侧向钻孔”效应到达电极。由于结合了SiO_2/Si3N_4和PI封装的优点，SiO_2/Si3N_4/PI封装在5V电压应力下可实现小于10μA的泄漏电流。本文的分析可以为包装材料的设计和失效机理分析提供指导。
Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical sensors and biosensors in the liquid environment. One of the key factors limiting the wide adoption of the AlGaN/GaN liquid sensor is the package reliability issue. In this paper, the reliability of three types of sensor packaging materials (SiO2/Si3N4, PI, and SiO2/Si3N4/PI) on top of 5-μm metal are tested in Phosphate buffer saline (PBS) solution. By analyzing the I-V characteristics, it is found that the leakage currents within different regimes follow distinct leakage models, whereby the key factors limiting the leakage current are identified. Moreover, the physical mechanisms of the package failure are illustrated. The failure of the SiO2/Si3N4 package is due to its porous structure such that ions in the solution can penetrate into the packaging material and reduce its resistivity. The failure of the PI package at a relatively low voltage (<3 V) is mainly due to the poor adhesion of PI to the AlGaN surface such that the solution can reach the electrode by the “lateral drilling” effect. The SiO2/Si3N4/PI package achieves less than 10 μA leakage current at 5 V voltage stress because it combines the advantages of the SiO2/Si3N4 and the PI packages. The analysis in this work can provide guidelines for the design and failure mechanism analysis of packaging materials.
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