Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells
Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells
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InGaN/GaN MQW 太阳能电池中通过 V 形凹坑的载流子传输
DOI：
10.1088/1674-1056/26/3/038104
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发表时间：
2017-03
影响因子：
1.7
通讯作者：
Wang Li
中科院分区：
文献类型：
--
作者：
Liu Shitao;Quan Zhijue;Wang Li
研究了InGaN/GaN多量子阱（MQW）太阳能电池中载流子在v形坑中的输运。通过仿真，发现v坑可以作为光生载流子的有效逃逸路径。由于v坑侧壁上的量子阱势垒厚度较薄，铟含量较低，进入侧壁量子阱的载流子很容易逃逸并贡献光电流。这为平面量子阱中产生的携带子形成了一条平行的逃逸路线。随着平面MQW势垒厚度的增加，更多的载流子将通过v坑传输。此外，还发现v坑对位错的屏蔽作用降低了载流子的复合损失。这些发现不仅有助于理解InGaN/GaN MQW中的载流子输运机制，而且对太阳能电池的结构设计也具有重要意义。
Carrier transport via the V-shaped pits (V-pits) in InGaN/GaN multiple-quantum-well (MQW) solar cells is numerically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the flat quantum wells. As the barrier thickness of the flat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.
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