Temperature dependence of the electrical resistivity in ZrB2 thin film prepared by DC magnetron sputtering
Temperature dependence of the electrical resistivity in ZrB2 thin film prepared by DC magnetron sputtering
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直流磁控溅射制备 ZrB2 薄膜电阻率的温度依赖性
DOI：
10.1016/j.matlet.2021.129733
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发表时间：
2021-03
影响因子：
3
通讯作者：
Yanyan Wang
中科院分区：
文献类型：
--
作者：
Guangke Tian;Xinyu Li;Zhansheng Dong;Tingting Shi;Yanyan Wang
2.材料和方法ZrB 2 薄膜是在磁控溅射设备中制备的（详细信息在我们之前的工作中报道过[7]）。抛光的 Si (1 0 0) 晶片用作衬底。在本工作中，我们有意识地选择两组沉积参数，在溅射功率为100 W、基底在室温（RT，即不刻意加热）的条件下制备非晶ZrB 2 薄膜，并在溅射功率为300 W、基底加热到673 K的条件下制备纳米晶ZrB 2 薄膜。根据其沉积速率，两组ZrB 2 薄膜的厚度控制在近250 nm。通过掠入射 X 射线衍射仪（GIXRD，XPERT-PRO）和高分辨率透射电子显微镜（HRTEM，JEM 2100F，日本）对结构进行表征。四点探针测量采用吉时利霍尔测量仪进行，恒温控制系统工作温度范围为77K至600K。电阻率测量误差约为±0.5μΩ。厘米。
2. Materials and methodsZrB 2 films are prepared in a magnetron sputtering equipment (details reported in our previous work [7]). Polished Si (1 0 0) wafers are used as substrates. In the present work, we choose consciously two sets of deposition parameters to prepare amorphous ZrB 2 film with sputtering power of 100 W and substrate being at room temperature (RT, ie without intentional heating), and fabricate nanocrystalline ZrB 2 films with sputtering power of 300 W and substrate being heated at 673 K. The thicknesses of both sets of ZrB 2 films are controlled nearly 250 nm according to its deposition rates. Structure is characterized by grazing incidence X-ray diffractometer (GIXRD, XPERT-PRO) and high-resolution transmission electron microscopy (HRTEM, JEM 2100F, Japan). Four-point probe measurements are performed using a Keithley Hall Measuring Instrument with a thermostatically controlling system being able to working in a range of temperature from 77 K to 600 K. The measurement tolerance of resistivity is about±0.5 μΩ. cm.
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