High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene.
High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene.
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DOI：
10.1021/nn302918x
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发表时间：
2012-09-25
期刊：
影响因子：
17.1
通讯作者：
Duan X
中科院分区：
文献类型：
--
作者：
Liu L;Zhou H;Cheng R;Yu WJ;Liu Y;Chen Y;Shaw J;Zhong X;Huang Y;Duan X
Bernal堆叠（AB堆叠）双层石墨烯对于功能性电子和光子器件具有重要意义，这是由于利用垂直电场连续调节其带隙的可行性。机械剥离可用于生产AB堆叠的双层石墨烯薄片，但通常尺寸限于几微米。化学气相沉积（CVD）最近已被探索用于合成双层石墨烯，但通常具有有限的覆盖率以及AB和随机堆叠结构的混合物。本文报道了一种制备大面积高质量AB叠层石墨烯的合理方法。我们表明，在铜箔上石墨烯生长的自限制效应可以通过在低压CVD工艺中使用高的H2/CH 4比率来打破，以使双层石墨烯能够继续生长。高温低压成核步骤被认为是形成具有高AB堆积比的双层石墨烯核的关键。设计了一种合理的两步化学气相沉积工艺，用于制备高AB堆积比（高达90%）和高覆盖率（高达99%）的双层石墨烯。电输运研究表明，由生长的双层石墨烯制成的器件表现出AB堆叠双层石墨烯的典型特征，在室温下具有超过4，000 cm 2/V·s的最高载流子迁移率，与剥离的双层石墨烯相当。
Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene.
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