The effect of deposition parameters on microstructure and properties of cBN films by linear ion source assisted RFMS
The effect of deposition parameters on microstructure and properties of cBN films by linear ion source assisted RFMS
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线性离子源辅助RFMS研究沉积参数对cBN薄膜微观结构和性能的影响
DOI：
10.1080/10584587.2019.1592581
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发表时间：
2019-05
影响因子：
0.7
通讯作者：
Lu Yuangang
中科院分区：
文献类型：
--
作者：
Tian Shuai;Xu Feng;Ye Peng;Wu Jinxin;Tu Luqiang;Zuo Dunwen;Lu Yuangang
采用阳极层线性离子源(ALLIS)辅助射频磁控溅射(RFMS)方法制备了立方氮化硼(CBN)薄膜，研究了沉积温度和衬底偏压对薄膜的物相组成、表面形貌和纳米硬度的影响。实验中获得的临界沉积温度为700 °C，偏压为−200V，为形成立方氮化硼的阈值。薄膜中的cBN含量随着沉积温度的升高而增加，当偏压超过−210V时，薄膜中cBN含量逐渐降低。最后，在900 °C和−210V下，改变Allis功率，沉积了cBN薄膜，并计算了沉积时薄膜中的残余应力。结果表明，在较高的温度和合适的偏置电压下，ALLIS可以获得低残余应力的CBN薄膜。
Abstract Cubic boron nitride (cBN) films were prepared by Anode Layer Linear Ion Source (ALLIS) assisted Radio Frequency Magnetron Sputtering (RFMS) method, and the effect of deposition temperature and substrate bias voltage on the phase component, surface morphology and nanohardness was investigated. In the experiment, the critical deposition temperature of 700 °C and bias voltage of −200 V were obtained as the threshold for the formation of cBN. The cBN content in the film increased with the increase of deposition temperature, while it gradually decreased when the bias voltage exceeded −210 V. Finally, cBN films were deposited at 900 °C and −210 V with varying ALLIS power, and the residual stress in the as-deposited films was calculated. The result indicated that cBN films with low residual stress can be obtained with ALLIS at high temperature and appropriate bias voltage.
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影响因子：
2.7
作者：
P. Mirkarimi;K. Mccarty;D. Medlin;W. G. Wolfer;T. Friedmann;E. Klaus;G. Cardinale;D. G. Howitt
通讯作者：
P. Mirkarimi;K. Mccarty;D. Medlin;W. G. Wolfer;T. Friedmann;E. Klaus;G. Cardinale;D. G. Howitt
DOI：
10.1103/physrevb.53.11884
发表时间：
1996-05
期刊：
Physical review. B, Condensed matter
影响因子：
--
作者：
Fahy
通讯作者：
Fahy
影响因子：
0.7
作者：
Wang Ming'e;Gong Shuili;Ma Guojia;Liu Xing;Zhang Lin;Wang Da-wang;Lu Wenqi;Dong Chuang
通讯作者：
Wang Ming'e;Gong Shuili;Ma Guojia;Liu Xing;Zhang Lin;Wang Da-wang;Lu Wenqi;Dong Chuang
影响因子：
2.1
作者：
Y. Le;H. Oechsner
通讯作者：
Y. Le;H. Oechsner
阳极层线性离子源辅助射频磁控溅射沉积立方氮化硼薄膜
影响因子：
2.1
作者：
Tian, Shuai;Xu, Feng;Zuo, Dunwen
通讯作者：
Zuo, Dunwen