Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces.
Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces.
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DOI：
10.3390/s110100674
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Irokawa Y
中科院分区：
文献类型：
--
作者：
Irokawa Y
在本文中，我回顾了我最近的研究结果，使用氮化物基半导体二极管的氢传感器，重点是氢与器件的相互作用机制。首先，讨论了界面修饰对氢探测灵敏度的影响。肖特基电极下GaN的表面缺陷对氢敏特性没有关键作用。然而，插入在金属/半导体界面的介电层被发现引起氢传感性能的显着变化，这意味着可以实现对氢的化学选择性。电容-电压（C-V）特性表明，肖特基金属中的功函数变化不是氢敏性的主要机制。金属与半导体之间的界面在氢与半导体器件的相互作用中起着关键的作用。其次，利用低频C-V特性研究了氢与二极管的相互作用机理。结果表明，金属/半导体界面极化的形成可归因于与氢有关的偶极子。此外，使用低频C-V表征导致即使在室温下也能清楚地检测到100 ppm的氢，在室温下使用常规的电流-电压（I-V）表征很难检测到氢，这表明低频C-V方法在检测非常低的氢浓度时是有效的。
In this paper, I review my recent results in investigating hydrogen sensors using nitride-based semiconductor diodes, focusing on the interaction mechanism of hydrogen with the devices. Firstly, effects of interfacial modification in the devices on hydrogen detection sensitivity are discussed. Surface defects of GaN under Schottky electrodes do not play a critical role in hydrogen sensing characteristics. However, dielectric layers inserted in metal/semiconductor interfaces are found to cause dramatic changes in hydrogen sensing performance, implying that chemical selectivity to hydrogen could be realized. The capacitance-voltage (C–V) characteristics reveal that the work function change in the Schottky metal is not responsible mechanism for hydrogen sensitivity. The interface between the metal and the semiconductor plays a critical role in the interaction of hydrogen with semiconductor devises. Secondly, low-frequency C–V characterization is employed to investigate the interaction mechanism of hydrogen with diodes. As a result, it is suggested that the formation of a metal/semiconductor interfacial polarization could be attributed to hydrogen-related dipoles. In addition, using low-frequency C–V characterization leads to clear detection of 100 ppm hydrogen even at room temperature where it is hard to detect hydrogen by using conventional current-voltage (I–V) characterization, suggesting that low-frequency C–V method would be effective in detecting very low hydrogen concentrations.
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