Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates
Depth distribution of carrier lifetimes in semipolar (11macron01) GaN grown by MOCVD on patterned Si substrates
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在图案化 Si 衬底上通过 MOCVD 生长的半极性 (11macron01) GaN 中载流子寿命的深度分布
DOI：
10.1117/12.2005514
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
H. Morkoç
中科院分区：
文献类型：
--
作者：
N. Izyumskaya;S. Okur;F. Zhang;V. Avrutin;Ü. Özgür;S. Metzner;C. Karbaum;F. Bertram;J. Christen;H. Morkoç
采用金属有机化学气相沉积技术在图像化（001）Si衬底上生长了半极性（11macron01） GaN层和GaN/InGaN LED结构。用稳态和时间分辨光致发光（PL）研究了半极性样品的光学性质。利用空间分辨阴极发光和近场扫描光学显微镜研究了稳态PL发射线的光子能量和强度以及时间分辨PL的载流子衰减时间与扩展缺陷分布的相关性。在聚结和非聚结的半极层中，供体束缚激子（DX）的发射强度与目前最先进的c平面GaN模板相当。为了深入了解近表面区域和层深部分对极平面和半极（11macron01） GaN载流子动力学的贡献，在267和353nm两种不同的激发波长下测量了时间分辨PL，分别提供约50 nm和100 nm的不同激发深度。时间分辨PL数据表明，近表层相对没有非辐射中心（点和/或扩展缺陷），而半极性薄膜的较深区域（深度超过~100 nm）有更多缺陷，从而导致较短的衰减时间。
Semipolar (11macron01) GaN layers and GaN/InGaN LED structures were grown by metal-organic chemical vapor deposition on patterned (001) Si substrates. Optical properties of the semipolar samples were studied by steady-state and time-resolved photoluminescence (PL). Photon energies and intensities of emission lines from steady-state PL as well as carrier decay times from time-resolved PL were correlated with the distributions of extended defects studied by spatially resolved cathodoluminescence and nearfield scanning optical microscopy. Intensity of donor-bound exciton (DX) emission from both coalesced and non-coalesced semipolar layers is comparable to that of state-of-art c-plane GaN template. To gain insight into the contribution from near surface region and deeper portion of the layers to carrier dynamics in polarc-plane and semipolar (11macron01) GaN, time-resolved PL was measured with two different excitation wavelengths of 267 and 353 nm, which provide different excitation depths of about 50 nm and 100 nm, respectively. Time-resolve PL data indicate that the near-surface layer is relatively free from nonradiative centers (point and/or extended defects), while deeper region of the semipolar film (beyond of ~100 nm in depth) is more defective, giving rise to shorter decay times.
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作者：
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DOI：
10.1002/pssc.200880840
发表时间：
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期刊：
Physica Status Solidi (c)
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DOI：
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发表时间：
2007
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影响因子：
1.8
作者：
N. Izyumskaya;S. Liu;S. Okur;M. Wu;V. Avrutin;Ü. Özgür;S. Metzner;F. Bertram;J. Christen;L. Zhou;D. Smith;H. Morkoç
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