Controlling the crystal phase and structural quality of epitaxial InAs nanowires by tuning V/III ratio in molecular beam epitaxy
Controlling the crystal phase and structural quality of epitaxial InAs nanowires by tuning V/III ratio in molecular beam epitaxy
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通过调节分子束外延中的 V/III 比来控制外延 InAs 纳米线的晶相和结构质量
DOI：
10.1016/j.actamat.2015.03.046
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发表时间：
2015-06
期刊：
影响因子：
9.4
通讯作者：
Jin Zou
中科院分区：
文献类型：
--
作者：
Zhen-Yu Lu;Ping-Ping Chen;Wei Lu;Jin Zou
In this study, we demonstrated the control of crystal phase and structural quality of Au-catalyzed InAs nanowires grown on the GaAs {1 1 1}Bsubstrates by tuning the V/III ratio in molecular beam epitaxy. It has been found that InAs nanowires can only be grown in a relatively narrow window of the V/III ratio. It is also demonstrated that the V/III ratio can be used to control the structural quality of wurtzite structured and zinc-blende structured InAs nanowires under low V/III ratios, and defect-free wurtzite structured and zinc-blende structured InAs nanowires were successfully achieved. This study provides an insight into the controlled growth of high-quality wurtzite structured and zinc-blende structured InAs nanowires through the V/III ratio engineering.
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