Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
Importance of As and Ga Balance in Achieving Long GaAs Nanowires by Selective Area Epitaxy
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As 和 Ga 平衡在通过选择性区域外延获得长 GaAs 纳米线中的重要性
DOI：
10.1021/acs.cgd.3c00172
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发表时间：
2023
影响因子：
3.8
通讯作者：
Chereau E
中科院分区：
文献类型：
--
作者：
Chereau E
本文报道了用无催化剂气固相反应机制选择性区域生长GaAs纳米线的实验结果。采用氢化物气相外延（HVPE）技术在GaAs（111）B衬底上生长了有序的GaAs纳米线。当SiNx或SiOx掩模中的孔的开口直径在80 ~ 340 nm范围内变化时，GaAs纳米线沿沿着B方向生长，具有完美的六边形形状。研究了生长条件和孔尺寸对NW长度和生长速率的影响。在高的As 4分压下观察到NW长度的饱和，这可以通过在NW顶面的（111）B表面上存在As三聚体来解释。通过降低As 4分压和减小孔洞尺寸，获得了高深宽比的纳米线。在相同条件下，最长和最薄的NW比二维层生长得更快，这强烈表明Ga吸附原子从NW侧壁到其顶部的表面扩散有助于所得的轴向生长速率。这些发现得到了一个专用模型的支持。这项研究突出了HVPE工艺生长高深宽比GaAs NW阵列具有高选择性的能力。
We report on the selective area growth (SAG) of GaAs nanowires (NWs) by the catalyst-free vapor-solid mechanism. Well-ordered GaAs NWs were grown on GaAs(111)B substrates patterned with a dielectric mask using hydride vapor phase epitaxy (HVPE). GaAs NWs were grown along the ⟨111⟩B direction with perfect hexagonal shape when the hole’s opening diameter in SiNxor SiOxmask was varied from 80 to 340 nm. The impact of growth conditions and the hole size on the NW lengths and growth rates was investigated. A saturation of the NW lengths was observed at high partial pressures of As4, explained by the presence of As trimers on the (111)B surface at the NW top surface. By decreasing As4partial pressure and decreasing the hole size, high aspect ratio NWs were obtained. The longest and thinnest NWs grew faster than a two-dimensional layer under the same conditions, which strongly suggests that surface diffusion of Ga adatoms from the NW sidewalls to their top contributes to the resulting axial growth rate. These findings were supported by a dedicated model. The study highlights the capability of the HVPE process to grow high aspect ratio GaAs NW arrays with high selectivity.
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影响因子：
10.8
作者：
Dai, Xing;Zhang, Sen;Soci, Cesare
通讯作者：
Soci, Cesare
影响因子：
10.8
作者：
Bar-Sadan, Maya;Barthel, Juri;Houben, Lothar
通讯作者：
Houben, Lothar
影响因子：
10.8
作者：
Tomioka, Katsuhiro;Motohisa, Junichi;Fukui, Takashi
通讯作者：
Fukui, Takashi
GaAs <111>B 纳米线无催化剂生长机制的理论理解
DOI：
--
发表时间：
2019
期刊：
影响因子：
--
作者：
In Won Yeu;Gyuseung Han;Jaehong Park;C. Hwang;Jung
通讯作者：
Jung
影响因子：
3.5
作者：
Kim, Hyunseok;Ren, Dingkun;Huffaker, Diana L.
通讯作者：
Huffaker, Diana L.