Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO(2)/Si(3)N(4) Dual-Layer Insulator.
Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO(2)/Si(3)N(4) Dual-Layer Insulator.
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DOI：
10.3390/ma15030819
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发表时间：
2022-01-21
期刊：
影响因子：
--
通讯作者：
Kang IM
中科院分区：
文献类型：
--
作者：
Min SR;Cho MS;Lee SH;Park J;An HD;Kim GU;Yoon YJ;Seo JH;Jang JW;Bae JH;Lee SH;Kang IM
通过使用严格的 TCAD 模拟，研究了自热效应 (SHE) 对具有堆叠 TiO2/Si3N4 双层绝缘体的 GaN MOSFET 电气特性的影响。为了准确分析它们，将带有Si3N4单层绝缘体的GaN MOSFET一起进行仿真工作。堆叠式 TiO2/Si3N4 GaN MOSFET 的最大通态电流为 743.8 mA/mm，这是由于 TiO2/Si3N4 的氧化物电容比 Si3N4 单层绝缘体更大的氧化物电容而得到的改进值。然而，TiO2/Si3N4 堆叠层增加的电场和电流密度使器件的温度更高。这会导致设备性能下降。针对高功率和高频特性，我们对SHE调制的GaN MOSFET的工作机制进行了仿真和分析。 SHE 将器件内部的最高温度提高到 409.89 K。在这种情况下，与未发生 SHE 的器件相比，堆叠式 TiO2/Si3N4 基 GaN MOSFET 的最大通态电流和最大跨导值均降低了 25%； Ron从1.41 mΩ·cm2增加到2.56 mΩ·cm2，截止频率从5.45 GHz降低26%。尽管 SHE 降低了堆叠式 TiO2/Si3N4 基 GaN MOSFET 的性能，但它显示出比具有 Si3N4 单层绝缘体的 GaN MOSFET 更优越的电气性能。
The self-heating effects (SHEs) on the electrical characteristics of the GaN MOSFETs with a stacked TiO2/Si3N4 dual-layer insulator are investigated by using rigorous TCAD simulations. To accurately analyze them, the GaN MOSFETs with Si3N4 single-layer insulator are conducted to the simulation works together. The stacked TiO2/Si3N4 GaN MOSFET has a maximum on-state current of 743.8 mA/mm, which is the improved value due to the larger oxide capacitance of TiO2/Si3N4 than that of a Si3N4 single-layer insulator. However, the electrical field and current density increased by the stacked TiO2/Si3N4 layers make the device’s temperature higher. That results in the degradation of the device’s performance. We simulated and analyzed the operation mechanisms of the GaN MOSFETs modulated by the SHEs in view of high-power and high-frequency characteristics. The maximum temperature inside the device was increased to 409.89 K by the SHEs. In this case, the stacked TiO2/Si3N4-based GaN MOSFETs had 25%-lower values for both the maximum on-state current and the maximum transconductance compared with the device where SHEs did not occur; Ron increased from 1.41 mΩ·cm2 to 2.56 mΩ·cm2, and the cut-off frequency was reduced by 26% from 5.45 GHz. Although the performance of the stacked TiO2/Si3N4-based GaN MOSFET is degraded by SHEs, it shows superior electrical performance than GaN MOSFETs with Si3N4 single-layer insulator.
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