Effect of laser repetition rate on the growth of Sc2O3 via pulsed laser deposition
Effect of laser repetition rate on the growth of Sc2O3 via pulsed laser deposition
复制标题
激光重复频率对脉冲激光沉积 Sc2O3 生长的影响
DOI:
10.1007/s00339-022-05698-4
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发表时间:
2022
期刊:
影响因子:
--
通讯作者:
Govindassamy G
中科院分区:
文献类型:
--
作者:
Govindassamy G
This paper reports a study of the effect of laser pulse repetition rate and substrate temperature on the properties of crystalline Sc2O3films grown on <0001>-oriented sapphire via pulsed laser deposition (PLD). For the range of substrate laser-heating powers investigated, optimum <111>-film growth was obtained at the highest available repetition rate of 100 Hz. Scanning electron microscopy and X-ray diffraction measurements revealed that a decrease in the repetition rate favours highly textured/island growth. The repetition rate was also proven to affect the lattice constant of the films, with a difference up to 0.3% between the films grown at high and low repetition rates. The general trend indicates that the out-of-plane lattice constant of the film shifts closer to the bulk value when the pulse repetition rate is increased. However, the lattice constant could also be reduced through in-situ post-growth annealing, which had the additional benefit of reducing the width of the (222) rocking curve peak. This work provides further evidence that energetic-PLD dynamics leads to higher quality PLD-grown crystalline films and for this material undermines the old adage that lower pulse repetition rates lead to higher quality thin-film crystalline growth.
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DOI:
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发表时间:
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期刊:
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通讯作者:
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