Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias
Thermal and Electrical Properties of BCB-Liner Through-Silicon Vias
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BCB-Liner 硅通孔的热性能和电性能
DOI：
10.1109/tcpmt.2014.2363659
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发表时间：
2014-11
影响因子：
2.2
通讯作者：
Wang, Zheyao
中科院分区：
文献类型：
--
作者：
Huang, Cui;Pan, Liyang;Liu, Ran;Wang, Zheyao
使用苯并环丁烯（BCB）衬垫作为绝缘体的硅通孔（TSV）具有减小TSV电容和热膨胀应力的潜力。本文报道了评估的BCB内衬TSV的热和电性能。C-V和I-V特性在室温和高达125°C的高温下测量，以表征不同温度下电容和漏电流的电气特性。讨论了与BCB衬层有关的C-V和I-V特性，并分析了其机理。在-65 ° C至150°C之间进行热循环，并测量热循环前后的C-V和I-V特性以评估BCB衬垫的热机械稳定性，结果表明，热循环后的C-V和I-V特性得到改善。这些对BCB衬层TSV的电学和热学性质的初步结果表明，它们具有良好的热稳定性。
Through-silicon vias (TSVs) using benzocyclobutene (BCB)-liners as the insulator have the potential for reducing the TSV capacitances and the thermal expansion stresses. This paper reports the assessments of BCB-liner TSVs with respect to thermal and electrical properties. The C-V and I-V characteristics are measured at room temperature and at an elevated temperature as high as 125°C to characterize the electrical properties of capacitance and leakage current at different temperatures. Some C-V and I-V features associated with BCB-liners are discussed and the mechanisms are analyzed. Thermal cycling between -65°C and 150°C is performed, and the C-V and I-V characteristics are measured before and after thermal cycling to evaluate the thermomechanical stability of the BCB-liners, and the results show that the C-V and I-V properties are improved after thermal cycling. These preliminary results on the electrical and thermal properties of BCB-liner TSVs show that they have good thermal stability.
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影响因子：
1.8
作者：
G. Deptuch;D. Christian;J. Hoff;R. Lipton;A. Shenai;M. Trimpl;R. Yarema;T. Zimmerman
通讯作者：
G. Deptuch;D. Christian;J. Hoff;R. Lipton;A. Shenai;M. Trimpl;R. Yarema;T. Zimmerman
DOI：
10.1109/tdmr.2011.2176126
发表时间：
2012-06
影响因子：
2
作者：
F. Che;S. Lim;T. Chai;Xiaowu Zhang
通讯作者：
F. Che;S. Lim;T. Chai;Xiaowu Zhang
影响因子：
5.4
作者：
G. V. D. Plas;P. Limaye;Igor Loi;A. Mercha;H. Oprins;C. Torregiani;S. Thijs;D. Linten;M. Stucchi-M.-Stuc
通讯作者：
G. V. D. Plas;P. Limaye;Igor Loi;A. Mercha;H. Oprins;C. Torregiani;S. Thijs;D. Linten;M. Stucchi-M.-Stuc
DOI：
10.1109/iitc.2011.5940326
发表时间：
2011-05
期刊：
2011 IEEE International Interconnect Technology Conference
影响因子：
--
作者：
Sungdong Cho;Sinwoo Kang;Kangwook Park;Jaechul Kim;Kiyoung Yun;Kisoon Bae;W. S. Lee;S. Ji;
通讯作者：
Sungdong Cho;Sinwoo Kang;Kangwook Park;Jaechul Kim;Kiyoung Yun;Kisoon Bae;W. S. Lee;S. Ji;
DOI：
10.1109/tdmr.2012.2194495
发表时间：
2012-04
影响因子：
2
作者：
Xi Liu;Qiao Chen;V. Sundaram;M. Simmons-Matthews;K. Wachtler;R. Tummala;S. Sitaraman
通讯作者：
Xi Liu;Qiao Chen;V. Sundaram;M. Simmons-Matthews;K. Wachtler;R. Tummala;S. Sitaraman