Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure
Frequency and voltage dependency of interface states and series resistance in Al/SiO2/p-Si MOS structure
复制标题
Al/SiO2/p-Si MOS 结构中界面态和串联电阻的频率和电压依赖性
DOI：
10.1016/j.mssp.2011.05.009
复制
发表时间：
2010-12
影响因子：
4.1
通讯作者：
Huang, Shihua
中科院分区：
文献类型：
--
作者：
Xiao, Hong;Huang, Shihua
The capacitance–voltage (C–V) and conductance–voltage (G/ω–V) characteristics of Al/SiO2/p-Si metal-oxide-semiconductor (MOS) Schottky diodes have been measured in the voltage range from −3 to +3V and frequency range from 5KHz to 1MHz at room temperature. It is found that both C and G/ω of the MOS capacitor are very sensitive to frequency. The fairly large frequency dispersion of C–V and G/ω–V characteristics can be interpreted in terms of the particular distribution of interface states at SiO2/Si interface and the effect of series resistance. At relatively low frequencies, the interface states can follow an alternating current (AC) signal that contributes to excess capacitance and conductance. This leads to an anomalous peak of C–V curve in the depletion and accumulation regions. In addition, a peak at approximately −0.2V appears in the Rs–V profiles at low frequency. The peak values of the capacitance and conductance decrease with increasing frequency. The density distribution profile of interface state density (Nss) obtained from CHF–CLFcapacitance measurement also shows a peak in the depletion region.
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DOI：
10.1016/j.mejo.2004.01.001
发表时间：
2004-05
期刊：
Microelectron. J.
影响因子：
--
作者：
Nikos Konofaos
通讯作者：
Nikos Konofaos
影响因子：
6.7
作者：
H. Kanbur;Ş. Altındal;A. Tataroğlu
通讯作者：
H. Kanbur;Ş. Altındal;A. Tataroğlu
影响因子：
4
作者：
Ş. Karataş;A. Türüt
通讯作者：
Ş. Karataş;A. Türüt
影响因子：
2.8
作者：
I. Dökme;Ş. Altındal
通讯作者：
I. Dökme;Ş. Altındal
影响因子：
4
作者：
B. Akkal;Z. Benamara;B. Gruzza;L. Bideux
通讯作者：
B. Akkal;Z. Benamara;B. Gruzza;L. Bideux