Research on double-barrier resonant tunneling effect based stress measurement methods
Research on double-barrier resonant tunneling effect based stress measurement methods
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基于双势垒共振隧道效应的应力测量方法研究
DOI：
10.1016/j.sna.2008.12.015
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发表时间：
2009-03
影响因子：
4.6
通讯作者：
中科院分区：
文献类型：
--
作者：
半导体材料的压阻效应常作为微传感器的传感原理。谐振隧道二极管（RTD）已被证明具有负微分电阻效应，其电流-电压特性随着应力而变化，应力可由外部机械负载（例如压力、加速度等）产生。据此，RTD的细观压阻效应可用于应力测量。本文讨论了两种基于双势垒共振隧道效应的应力测量方法，其中包括最初提出的基于RTD-惠斯通电桥的方法。根据基于RTD-惠斯通电桥的实验结果，RTD的压阻灵敏度在3个数量级范围内可调。并且RTD的最大压阻灵敏度比硅、砷化镓等常见半导体材料大。
Piezoresistive effect of semiconductor materials is often used in microsensors as a sensing principle. Resonant tunneling diodes (RTDs) have been proved to have negative differential resistance effect, and their current–voltage characteristics change as a function of stress, which can be generated by external mechanical loads, such as pressures, accelerations and so on. According to this, the Meso-piezoresistive effect of RTDs can be used for stress measurement. This paper discusses two double-barrier resonant tunneling effect based stress measurement methods, including an RTD-Wheatstone bridge based method originally proposed. According to the results from the RTD-Wheatstone bridge based experiment, the piezoresistive sensitivity of RTD is adjustable in a range of 3 orders. And the largest piezoresistive sensitivity of RTD is larger than that of common semiconductor materials, such as silicon and GaAs.
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影响因子：
1.7
作者：
C. Chen;R. Mathews;L. Mahoney;S. Calawa;J. Sage;K. Molvar;C. Parker;P. Maki;T. Sollner
通讯作者：
C. Chen;R. Mathews;L. Mahoney;S. Calawa;J. Sage;K. Molvar;C. Parker;P. Maki;T. Sollner
影响因子：
2.3
作者：
DEHE, A;FRICKE, K;HARTNAGEL, HL
通讯作者：
HARTNAGEL, HL
影响因子：
3.2
作者：
L. Cong;J. Albrecht;M. Nathan;P. Ruden
通讯作者：
L. Cong;J. Albrecht;M. Nathan;P. Ruden
DOI：
10.1109/sensor.1991.148811
发表时间：
1991-06
期刊：
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers
影响因子：
--
作者：
J.T. Suminto-
通讯作者：
J.T. Suminto-
影响因子：
3.1
作者：
P. Zhao;H. Cui;D. Woolard;K. Jensen;F. Buot
通讯作者：
P. Zhao;H. Cui;D. Woolard;K. Jensen;F. Buot