Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate
Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate
复制标题
硅衬底上 GaN 基垂直发光二极管的 N 极 n-GaN 的 Al/Ti/Au 接触稳定性
DOI：
10.1063/1.3640229
复制
发表时间：
2011-09
影响因子：
4
通讯作者：
Fengyi Jiang
中科院分区：
文献类型：
--
作者：
Junlin Liu;Feifei Feng;Yinhua Zhou;Jianli Zhang;Fengyi Jiang
研究了Si衬底上N极性n-GaN的Al/Ti/Au接触的电学特性。结果表明，采用Ar等离子体对Al/Ti/Au接触表面进行预处理，可以显著提高Al/Ti/Au接触的稳定性。在900 mA和室温下老化1000 h后，预处理样品的正向电压稳定在3.23 V左右。相比之下，未处理的样品的正向电压在24小时老化后从3.52 V增加到4 V。Ar等离子体处理样品与未处理样品之间的这些差异归因于Ar等离子体处理增加了n-GaN表面附近的VN浓度。
The electrical characteristics of Al/Ti/Au contact to N-polar n-GaN on Si substrate are investigated. It was found that a pre-treatment to the surface with Ar plasma could significantly enhance the stability of Al/Ti/Au contact. Forward voltage of the pre-treated sample was stabilized at about 3.23 V upon 1000 h aging under 900 mA and room temperature. In contrast, forward voltage of the untreated sample increased from 3.52 V to 4 V after 24 h aging. Those differences between the Ar plasma treated sample and untreated sample were attributed to the increase of the VN concentrate near surface of n-GaN by the Ar plasma treatment.
登录
查看更多内容
影响因子：
4
作者：
D. Hibbard;Sung-Pyo Jung;Chun-Lin Wang;D. Ullery;Y. S. Zhao;H. P. Lee;W. So;H. Liu
通讯作者：
D. Hibbard;Sung-Pyo Jung;Chun-Lin Wang;D. Ullery;Y. S. Zhao;H. P. Lee;W. So;H. Liu
影响因子：
4
作者：
J. Kwak;Kyu-Pil Lee;J. Y. Han;Jaehee Cho;S. Chae;O. Nam;Young-Kwan Park
通讯作者：
J. Kwak;Kyu-Pil Lee;J. Y. Han;Jaehee Cho;S. Chae;O. Nam;Young-Kwan Park
影响因子：
--
作者：
S. Jung;T. Seong;Hyunsoo Kim;K. Park;J. Park;G. Namgoong
通讯作者：
S. Jung;T. Seong;Hyunsoo Kim;K. Park;J. Park;G. Namgoong
影响因子：
4
作者：
June O. Song;S. -. Kim;J. Kwak;T. Seong
通讯作者：
June O. Song;S. -. Kim;J. Kwak;T. Seong
影响因子：
4
作者：
Ho Won Jang;C. Jeon;J. Kim;Jong‐Lam Lee
通讯作者：
Ho Won Jang;C. Jeon;J. Kim;Jong‐Lam Lee