Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling
Drain current multiplication in thin pillar vertical MOSFETs due to depletion isolation and charge coupling
复制标题
由于耗尽隔离和电荷耦合，薄柱垂直 MOSFET 中的漏极电流倍增
DOI：
10.1007/s10825-016-0853-y
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发表时间：
2016
影响因子：
2.1
通讯作者：
Hakim M
中科院分区：
文献类型：
--
作者：
Hakim M
在柱厚度为 200-10 nm 的情况下，研究了由于漏极耗尽区的体隔离和栅极-栅极电荷耦合导致的垂直 MOSFET 中的漏极电流倍增。对于柱厚度 >120 nm，不会发生耗尽隔离，因此发现体接触完全有效，不会增加漏极电流，而对于柱厚度 <60 nm，所有漏极偏置都会发生耗尽隔离，因此体接触无效。对于 60-120 nm 的中间柱厚度，即使耗尽隔离很明显，体接触仍然可以有效改善浮体效应和击穿。在这些中间柱厚度下，由于部分耗尽隔离，在输出特性中也观察到扭结。充电扭结和击穿行为的特征是柱厚度的函数，并且在柱厚度为 60 nm 时可以看到晶体管行为的转变。对于大于 60 nm 的柱厚度，发生体充电的电压随着柱厚度的减小而降低（并且归一化击穿电流增加），而对于小于 60 nm 的柱厚度，则看到相反的趋势。耗尽隔离和固有栅栅电荷耦合对漏极电流的相对贡献被量化。对于 120 至 80 nm 之间的柱厚度，发现漏极电流的增加主要是由于耗尽隔离，而对于 <60 nm 的柱厚度，发现漏电流的增加由固有的栅极-栅极电荷耦合控制。
Drain current multiplication in vertical MOSFETs due to body isolation by the drain depletion region and gate–gate charge coupling is investigated at pillar thicknesses in the range of 200–10 nm. For pillar thickness >120 nm depletion isolation does not occur and hence the body contact is found to be completely effective with no multiplication in drain current, whereas for pillar thicknesses <60 nm depletion isolation occurs for all drain biases and hence the body contact is ineffective. For intermediate pillar thicknesses of 60–120 nm, even though depletion isolation is apparent, the body contact is still effective in improving floating body effects and breakdown. At these intermediate pillar thicknesses, a kink is also observed in the output characteristics due to partial depletion isolation. The charging kink and the breakdown behavior are characterized as a function of pillar thickness, and a transition in the transistor behavior is seen at a pillar thickness of 60 nm. For pillar thickness greater than 60 nm, the voltage at which body charging occurs decreases (and the normalized breakdown current increases) with decreasing pillar thickness, whereas for pillar thickness less than 60 nm, the opposite trend is seen. The relative contributions to the drain current of depletion isolation and the inherent gate–gate charge coupling are quantified. For pillar thickness between 120 and 80 nm, the rise in the drain current is found to be mainly due to depletion isolation, whereas for pillar thicknesses <60 nm, the increase in the drain current is found to be governed by the inherent gate–gate charge coupling.
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