Enhancement of power factor in zinc antimonide thermoelectric thin film doped with titanium
Enhancement of power factor in zinc antimonide thermoelectric thin film doped with titanium
复制标题
钛掺杂锑化锌热电薄膜功率因数的提高
DOI：
10.1016/j.matlet.2017.08.063
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发表时间：
2017-12
影响因子：
3
通讯作者：
Fan Ping
中科院分区：
文献类型：
--
作者：
Zheng Zhuang-hao;Li Fu;Luo Jing-ting;Liang Guang-xing;Ma Hong-li;Zhang Xiang-hua;Fan Ping
采用多步共溅射法在柔性基底上制备了钛掺杂锑化锌薄膜，保证了钛在薄膜中的均匀分布。系统研究了Ti含量对ZnSb基薄膜微观结构和热电性能的影响。高分辨透射电子显微镜和X射线衍射分析表明，样品具有纳米尺寸的微晶，这将导致更好的热电性能。Ti掺杂的ZnSb薄膜的电导率在室温到200 °C的温度范围内是稳定的，然后随着温度的继续升高电导率有显著的增加。正如预期的那样，掺杂Ti后，薄膜的功率因数提高了近80%。
Titanium doped zinc antimonide thin films were prepared on flexible substrates by multi-step co-sputtering method, which can assure that the Ti is homogeneous distribution in the thin film. The influence of Ti content on the microstructure and thermoelectric properties of the ZnSb based thin films was systematically investigated. The high-resolution transmission electron microscopy and X-ray diffraction exhibit that the sample has nano-sized crystallites, which will lead to better thermoelectric properties. The electrical conductivity of the Ti-doping ZnSb thin films is stable at the temperature ranging from room-temperature to 200 °C and then it has a significant increase when the temperature continues increasing. As expected, the power factor of the thin film has almost 80% enhancement after Ti doped.
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影响因子：
2.7
作者：
D. Li;H. Hng;J. Ma;X. Qin
通讯作者：
D. Li;H. Hng;J. Ma;X. Qin
影响因子：
4
作者：
R. Sathyamoorthy;J. Dheepa
通讯作者：
R. Sathyamoorthy;J. Dheepa
影响因子：
6.7
作者：
Bellucci, A.;Mastellone, M.;Trucchi, D. M.
通讯作者：
Trucchi, D. M.
影响因子：
3.2
作者：
K. Valset;Xin Song;T. Finstad
通讯作者：
K. Valset;Xin Song;T. Finstad
影响因子：
2.1
作者：
Zhang, LT;Tsutsui, M;Yamaguchi, M
通讯作者：
Yamaguchi, M