High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
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具有改进漏极电流密度和高击穿电压的高性能 AlGaN 双通道 HEMT
DOI：
10.1186/s11671-020-03345-6
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发表时间：
2020-02
影响因子：
--
通讯作者：
Hao Yue
中科院分区：
文献类型：
--
作者：
Zhang Yachao;Li Yifan;Wang Jia;Shen Yiming;Du Lin;Li Yao;Wang Zhizhe;Xu Shengrui;Zhang Jincheng;Hao Yue
本文提出并利用金属有机化学气相沉积（MOCVD）技术生长了AlGaN双沟道异质结构，制备并研究了高性能AlGaN双沟道高电子迁移率晶体管（HEMT）。双沟道特性的实现有效地改善了AlGaN沟道异质结构的输运特性。一方面，由于沿垂直方向的双威尔斯势阱沿着分布和增强的载流子约束，提高了总的二维电子气（2DEG）密度。另一方面，每个沟道中的平均2DEG密度降低，并且由于载流子-载流子散射效应的抑制而导致迁移率提高。结果表明，AlGaN双沟道HEMT器件在0 V栅压下的最大漏电流密度（I-max）达到473 mA/mm，具有良好的上级击穿特性。这些结果不仅展示了AlGaN双沟道高电子迁移率晶体管在微波功率电子学中的巨大应用潜力，也为III族氮化物基电子器件的研究开辟了新的思路。
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. The implementation of double channel feature effectively improves the transport properties of AlGaN channel heterostructures. On one hand, the total two dimensional electron gas (2DEG) density is promoted due to the double potential wells along the vertical direction and the enhanced carrier confinement. On the other hand, the average 2DEG density in each channel is reduced, and the mobility is elevated resulted from the suppression of carrier-carrier scattering effect. As a result, the maximum drain current density (I-max) of AlGaN double channel HEMTs reaches 473 mA/mm with gate voltage of 0 V. Moreover, the superior breakdown performance of the AlGaN double channel HEMTs is also demonstrated. These results not only show the great application potential of AlGaN double channel HEMTs in microwave power electronics but also develop a new thinking for the studies of group III nitride-based electronic devices.
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影响因子：
5.3
作者：
通讯作者：
--
影响因子：
4
作者：
Yachao Zhang;Rui Guo;Shengrui Xu;Jincheng Zhang;Shenglei Zhao;Haiyong Wang;Q. Hu;Chunfu Zhang;Y. Hao
通讯作者：
Yachao Zhang;Rui Guo;Shengrui Xu;Jincheng Zhang;Shenglei Zhao;Haiyong Wang;Q. Hu;Chunfu Zhang;Y. Hao
影响因子：
3.1
作者：
T. Nanjo;A. Imai;Y. Suzuki;Y. Abe;T. Oishi;M. Suita;E. Yagyu;Y. Tokuda
通讯作者：
T. Nanjo;A. Imai;Y. Suzuki;Y. Abe;T. Oishi;M. Suita;E. Yagyu;Y. Tokuda
影响因子：
2.3
作者：
Weihang Zhang;Jincheng Zhang;Ming Xiao;Li Zhang;Y. Hao
通讯作者：
Weihang Zhang;Jincheng Zhang;Ming Xiao;Li Zhang;Y. Hao
DOI：
10.1109/ispsd.2019.8757585
发表时间：
2019-05
期刊：
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
影响因子：
--
作者：
Ming Xiao;Weihang Zhang;Yuhao Zhang;Hong Zhou;Kui Dang;Jincheng Zhang;Y. Hao
通讯作者：
Ming Xiao;Weihang Zhang;Yuhao Zhang;Hong Zhou;Kui Dang;Jincheng Zhang;Y. Hao